Advanced Atomic Layer Deposition Technologies for Micro-LEDs and VCSELs

Yen Wei Yeh, Su Hui Lin, Tsung Chi Hsu, Shouqiang Lai, Po Tsung Lee, Shui Yang Lien, Dong Sing Wuu, Guisen Li, Zhong Chen, Tingzhu Wu, Hao Chung Kuo*

*Corresponding author for this work

Research output: Contribution to journalReview articlepeer-review

10 Scopus citations


In recent years, the process requirements of nano-devices have led to the gradual reduction in the scale of semiconductor devices, and the consequent non-negligible sidewall defects caused by etching. Since plasma-enhanced chemical vapor deposition can no longer provide sufficient step coverage, the characteristics of atomic layer deposition ALD technology are used to solve this problem. ALD utilizes self-limiting interactions between the precursor gas and the substrate surface. When the reactive gas forms a single layer of chemical adsorbed on the substrate surface, no reaction occurs between them and the growth thickness can be controlled. At the Å level, it can provide good step coverage. In this study, recent research on the ALD passivation on micro-light-emitting diodes and vertical cavity surface emitting lasers was reviewed and compared. Several passivation methods were demonstrated to lead to enhanced light efficiency, reduced leakage, and improved reliability.

Original languageEnglish
Article number164
JournalNanoscale Research Letters
Issue number1
StatePublished - 2021


  • ALD
  • Micro-LED
  • Passivation
  • Reliability


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