Admittance spectroscopy and thermal stimulation current for band-offset characteristics in AlAs/GaAs n+-p structures

Jenn-Fang Chen, Jin Shung Wang, Pai Yong Wang, Nie Chuan Chen, Nian Ching Hsu

Research output: Contribution to journalArticlepeer-review

Abstract

Admittance spectroscopy is used to study a molecular-beam epitaxially grown GaAs n+-p diode with 100-angstrom-thick AlAs immersed in the lightly doped p-region. The measurements clearly show two trapping effects. Upon comparison with the reference sample without the AlAs layer, an equivalent circuit for the studied sample is developed. Based on this circuit, the admittance spectra are calculated and found to be consistent with the experimental spectra. From this result, the trap at Ea = 0.52 eV with a capture cross section 1.6 × 10-14 cm2 is believed to result from the resistance-capacitance time constant effect due to the thermionic emission of holes over the AlAs barrier and the activation energy corresponds to the AlAs/GaAs valence-band offset. The results of the thermal stimulation current further support this conclusion.

Original languageEnglish
Pages (from-to)227-230
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume39
Issue number1
DOIs
StatePublished - Jan 2000

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