Adaptive finite volume simulation of semiconductor devices on cluster architecture

Yi-Ming Li; Pu Chen; Jinn Liang Liu; Tien Sheng Chao; S. M. Sze

Adaptive finite volume simulation of semiconductor devices on cluster architecture

Yi-Ming Li^*, Pu Chen, Jinn Liang Liu, Tien Sheng Chao, S. M. Sze

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Chapter › peer-review

3 Scopus citations

Abstract

A new scientific computing algorithm for numerical solutions of a set of fundamental semiconductor device equations is presented. This simulation based on adaptive mesh, finite volume, monotone iterative, and a posteriori error estimation methods, is proposed and implemented successfully on a Linux-cluster computing environment. The new approach fully exploits the inherent parallelism of the monotone finite volume formulation of the basic semiconductor device equations and the cluster architecture in message passing interface (MPI) library. Parallel results demonstrate an excellent speedup with respect to the number of processor. Benchmarks and numerical results for a typical MOSFET device are also presented to show the accuracy and efficiency of the method.

Original language	English
Title of host publication	Recent Advances in Applied and Theoretical Mathematics
Publisher	World Scientific and Engineering Academy and Society
Pages	107-112
Number of pages	6
ISBN (Print)	9608052211
State	Published - 2000

Keywords

Adaptive Mesh
Cluster Computing
Finite Volume Method
Monotone Iterative Method
Semiconductor Device Simulation

Cite this

@inbook{0a7d2bdcfbf145b98a4875980fd1fbe8,

title = "Adaptive finite volume simulation of semiconductor devices on cluster architecture",

abstract = "A new scientific computing algorithm for numerical solutions of a set of fundamental semiconductor device equations is presented. This simulation based on adaptive mesh, finite volume, monotone iterative, and a posteriori error estimation methods, is proposed and implemented successfully on a Linux-cluster computing environment. The new approach fully exploits the inherent parallelism of the monotone finite volume formulation of the basic semiconductor device equations and the cluster architecture in message passing interface (MPI) library. Parallel results demonstrate an excellent speedup with respect to the number of processor. Benchmarks and numerical results for a typical MOSFET device are also presented to show the accuracy and efficiency of the method.",

keywords = "Adaptive Mesh, Cluster Computing, Finite Volume Method, Monotone Iterative Method, Semiconductor Device Simulation",

author = "Yi-Ming Li and Pu Chen and Liu, {Jinn Liang} and Chao, {Tien Sheng} and Sze, {S. M.}",

year = "2000",

language = "English",

isbn = "9608052211",

pages = "107--112",

booktitle = "Recent Advances in Applied and Theoretical Mathematics",

publisher = "World Scientific and Engineering Academy and Society",

address = "Greece",

}

TY - CHAP

T1 - Adaptive finite volume simulation of semiconductor devices on cluster architecture

AU - Li, Yi-Ming

AU - Chen, Pu

AU - Liu, Jinn Liang

AU - Chao, Tien Sheng

AU - Sze, S. M.

PY - 2000

Y1 - 2000

N2 - A new scientific computing algorithm for numerical solutions of a set of fundamental semiconductor device equations is presented. This simulation based on adaptive mesh, finite volume, monotone iterative, and a posteriori error estimation methods, is proposed and implemented successfully on a Linux-cluster computing environment. The new approach fully exploits the inherent parallelism of the monotone finite volume formulation of the basic semiconductor device equations and the cluster architecture in message passing interface (MPI) library. Parallel results demonstrate an excellent speedup with respect to the number of processor. Benchmarks and numerical results for a typical MOSFET device are also presented to show the accuracy and efficiency of the method.

AB - A new scientific computing algorithm for numerical solutions of a set of fundamental semiconductor device equations is presented. This simulation based on adaptive mesh, finite volume, monotone iterative, and a posteriori error estimation methods, is proposed and implemented successfully on a Linux-cluster computing environment. The new approach fully exploits the inherent parallelism of the monotone finite volume formulation of the basic semiconductor device equations and the cluster architecture in message passing interface (MPI) library. Parallel results demonstrate an excellent speedup with respect to the number of processor. Benchmarks and numerical results for a typical MOSFET device are also presented to show the accuracy and efficiency of the method.

KW - Adaptive Mesh

KW - Cluster Computing

KW - Finite Volume Method

KW - Monotone Iterative Method

KW - Semiconductor Device Simulation

UR - http://www.scopus.com/inward/record.url?scp=0013111058&partnerID=8YFLogxK

M3 - Chapter

AN - SCOPUS:0013111058

SN - 9608052211

SP - 107

EP - 112

BT - Recent Advances in Applied and Theoretical Mathematics

PB - World Scientific and Engineering Academy and Society

ER -

Adaptive finite volume simulation of semiconductor devices on cluster architecture

Abstract

Keywords

Other files and links

Fingerprint

Cite this