Active ESD shunt with transistor feedback to reduce Latchup susceptibility or false triggering

Paul C F Tong; Wensong Chen; Ming-Dou Ker; John Hui; Ping Ping Xu; Patty Z Q Liu

doi:10.1109/ICSICT.2004.1436633

Active ESD shunt with transistor feedback to reduce Latchup susceptibility or false triggering

Paul C F Tong^*, Wensong Chen, Ming-Dou Ker, John Hui, Ping Ping Xu, Patty Z Q Liu

^*Corresponding author for this work

Research output: Contribution to conference › Paper › peer-review

1 Scopus citations

Abstract

We present an anomalous latchup failure phenomenon related to the large Nwell resistor associated with the generic RC-triggered, MOSFET-based Active Clamp circuit for on-chip ESD protection between VCC and VSS buses. A novel Active Clamp circuit with PMOS feedback technique has been proposed to reduce the IC's susceptibility to Latchup during negative current injection at neighboring I/O pads or false triggering of the RC trigger circuit due to noise on the VCC power line. The effectiveness of this new Active Clamp circuit is confirmed by our experiment and simulation results. Optimisation of the size of the PMOS feedback transistor is also discussed in this paper.

Original language	English
Pages	820-823
Number of pages	4
DOIs	https://doi.org/10.1109/ICSICT.2004.1436633
State	Published - Oct 2004
Event	2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004 - Beijing, China Duration: 18 Oct 2004 → 21 Oct 2004

Conference

Conference	2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004
Country/Territory	China
City	Beijing
Period	18/10/04 → 21/10/04

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10.1109/ICSICT.2004.1436633

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Tong, P. C. F., Chen, W., Ker, M.-D., Hui, J., Xu, P. P., & Liu, P. Z. Q. (2004). Active ESD shunt with transistor feedback to reduce Latchup susceptibility or false triggering. 820-823. Paper presented at 2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004, Beijing, China. https://doi.org/10.1109/ICSICT.2004.1436633

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title = "Active ESD shunt with transistor feedback to reduce Latchup susceptibility or false triggering",

abstract = "We present an anomalous latchup failure phenomenon related to the large Nwell resistor associated with the generic RC-triggered, MOSFET-based Active Clamp circuit for on-chip ESD protection between VCC and VSS buses. A novel Active Clamp circuit with PMOS feedback technique has been proposed to reduce the IC's susceptibility to Latchup during negative current injection at neighboring I/O pads or false triggering of the RC trigger circuit due to noise on the VCC power line. The effectiveness of this new Active Clamp circuit is confirmed by our experiment and simulation results. Optimisation of the size of the PMOS feedback transistor is also discussed in this paper.",

author = "Tong, {Paul C F} and Wensong Chen and Ming-Dou Ker and John Hui and Xu, {Ping Ping} and Liu, {Patty Z Q}",

year = "2004",

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doi = "10.1109/ICSICT.2004.1436633",

language = "English",

pages = "820--823",

note = "2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004 ; Conference date: 18-10-2004 Through 21-10-2004",

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Tong, PCF, Chen, W, Ker, M-D, Hui, J, Xu, PP & Liu, PZQ 2004, 'Active ESD shunt with transistor feedback to reduce Latchup susceptibility or false triggering', Paper presented at 2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004, Beijing, China, 18/10/04 - 21/10/04 pp. 820-823. https://doi.org/10.1109/ICSICT.2004.1436633

Active ESD shunt with transistor feedback to reduce Latchup susceptibility or false triggering. / Tong, Paul C F; Chen, Wensong; Ker, Ming-Dou et al.
2004. 820-823 Paper presented at 2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004, Beijing, China.

Research output: Contribution to conference › Paper › peer-review

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AU - Tong, Paul C F

AU - Chen, Wensong

AU - Ker, Ming-Dou

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AU - Xu, Ping Ping

AU - Liu, Patty Z Q

PY - 2004/10

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N2 - We present an anomalous latchup failure phenomenon related to the large Nwell resistor associated with the generic RC-triggered, MOSFET-based Active Clamp circuit for on-chip ESD protection between VCC and VSS buses. A novel Active Clamp circuit with PMOS feedback technique has been proposed to reduce the IC's susceptibility to Latchup during negative current injection at neighboring I/O pads or false triggering of the RC trigger circuit due to noise on the VCC power line. The effectiveness of this new Active Clamp circuit is confirmed by our experiment and simulation results. Optimisation of the size of the PMOS feedback transistor is also discussed in this paper.

AB - We present an anomalous latchup failure phenomenon related to the large Nwell resistor associated with the generic RC-triggered, MOSFET-based Active Clamp circuit for on-chip ESD protection between VCC and VSS buses. A novel Active Clamp circuit with PMOS feedback technique has been proposed to reduce the IC's susceptibility to Latchup during negative current injection at neighboring I/O pads or false triggering of the RC trigger circuit due to noise on the VCC power line. The effectiveness of this new Active Clamp circuit is confirmed by our experiment and simulation results. Optimisation of the size of the PMOS feedback transistor is also discussed in this paper.

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T2 - 2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004

Y2 - 18 October 2004 through 21 October 2004

ER -

Active ESD shunt with transistor feedback to reduce Latchup susceptibility or false triggering

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