CDM ESD event has become the main ESD reliability concern for integrated-circuits products using nanoscale CMOS technology. A novel CDM ESD protection design, using self-biased current trigger (SBCT) and source pumping, has been proposed and successfully verified in 0.13-μm CMOS technology to achieve 1-kV CDM ESD robustness.
|Number of pages||4|
|Issue number||9-11 SPEC. ISS.|
|State||Published - 1 Aug 2007|