Achievement of normally-off AlGaN/GaN high-electron mobility transistor with p-NiO x capping layer by sputtering and post-annealing

Shyh Jer Huang, Cheng Wei Chou*, Yan Kuin Su, Jyun Hao Lin, Hsin-Chieh Yu, De Long Chen, Jian Long Ruan

*Corresponding author for this work

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