Achievement of normally-off AlGaN/GaN high-electron mobility transistor with p-NiO _x capping layer by sputtering and post-annealing

Engineering & Materials Science

• Sputtering 83%
• Hole concentration 82%
• High electron mobility transistors 75%
• Annealing 64%
• Leakage currents 46%
• Hysteresis 20%
• Transistors 18%
• Oxygen 17%
• Temperature 8%

Chemical Compounds

• Hole Concentration 100%
• Sputtering 70%
• Compound Mobility 50%
• Leakage Current 43%
• Environment 37%
• Hysteresis 32%
• Annealing 25%
• Ambient Reaction Temperature 18%
• Purity 16%
• Dioxygen 15%

Physics & Astronomy

• high electron mobility transistors 67%
• sputtering 51%
• annealing 39%
• leakage 36%
• transistors 17%
• breakdown 16%
• hysteresis 16%
• shift 13%
• oxygen 13%
• room temperature 12%