Accurate modeling and characterization of mobility in tensile and compressive stress for state-of-the-art manufacturing NMOSFETs

J. S. Wang; William P.N. Chen; C. H. Shih; C. Lien; Pin Su; Y. M. Sheu; Donald Y.S. Chao; K. Goto

doi:10.1109/VTSA.2007.378964

Accurate modeling and characterization of mobility in tensile and compressive stress for state-of-the-art manufacturing NMOSFETs

J. S. Wang^*, William P.N. Chen, C. H. Shih, C. Lien, Pin Su, Y. M. Sheu, Donald Y.S. Chao, K. Goto

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Original language	English
Title of host publication	2007 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA - Proceedings of Technical Papers
DOIs	https://doi.org/10.1109/VTSA.2007.378964
State	Published - 2007
Event	2007 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA - Hsinchu, Taiwan Duration: 23 Apr 2007 → 25 Apr 2007

Publication series

Name	International Symposium on VLSI Technology, Systems, and Applications, Proceedings

Conference

Conference	2007 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA
Country/Territory	Taiwan
City	Hsinchu
Period	23/04/07 → 25/04/07

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10.1109/VTSA.2007.378964

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Wang, J. S., Chen, W. P. N., Shih, C. H., Lien, C., Su, P., Sheu, Y. M., Chao, D. Y. S., & Goto, K. (2007). Accurate modeling and characterization of mobility in tensile and compressive stress for state-of-the-art manufacturing NMOSFETs. In 2007 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA - Proceedings of Technical Papers Article 4239532 (International Symposium on VLSI Technology, Systems, and Applications, Proceedings). https://doi.org/10.1109/VTSA.2007.378964

Wang, J. S. ; Chen, William P.N. ; Shih, C. H. et al. / Accurate modeling and characterization of mobility in tensile and compressive stress for state-of-the-art manufacturing NMOSFETs. 2007 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA - Proceedings of Technical Papers. 2007. (International Symposium on VLSI Technology, Systems, and Applications, Proceedings).

@inproceedings{46e6681d7d4f476fb63e5eda9f2f6d39,

title = "Accurate modeling and characterization of mobility in tensile and compressive stress for state-of-the-art manufacturing NMOSFETs",

author = "Wang, {J. S.} and Chen, {William P.N.} and Shih, {C. H.} and C. Lien and Pin Su and Sheu, {Y. M.} and Chao, {Donald Y.S.} and K. Goto",

year = "2007",

doi = "10.1109/VTSA.2007.378964",

language = "English",

isbn = "1424405858",

series = "International Symposium on VLSI Technology, Systems, and Applications, Proceedings",

booktitle = "2007 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA - Proceedings of Technical Papers",

note = "2007 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA ; Conference date: 23-04-2007 Through 25-04-2007",

}

Wang, JS, Chen, WPN, Shih, CH, Lien, C, Su, P, Sheu, YM, Chao, DYS & Goto, K 2007, Accurate modeling and characterization of mobility in tensile and compressive stress for state-of-the-art manufacturing NMOSFETs. in 2007 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA - Proceedings of Technical Papers., 4239532, International Symposium on VLSI Technology, Systems, and Applications, Proceedings, 2007 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA, Hsinchu, Taiwan, 23/04/07. https://doi.org/10.1109/VTSA.2007.378964

Accurate modeling and characterization of mobility in tensile and compressive stress for state-of-the-art manufacturing NMOSFETs. / Wang, J. S.; Chen, William P.N.; Shih, C. H. et al.
2007 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA - Proceedings of Technical Papers. 2007. 4239532 (International Symposium on VLSI Technology, Systems, and Applications, Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Accurate modeling and characterization of mobility in tensile and compressive stress for state-of-the-art manufacturing NMOSFETs

AU - Wang, J. S.

AU - Chen, William P.N.

AU - Shih, C. H.

AU - Lien, C.

AU - Su, Pin

AU - Sheu, Y. M.

AU - Chao, Donald Y.S.

AU - Goto, K.

PY - 2007

Y1 - 2007

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U2 - 10.1109/VTSA.2007.378964

DO - 10.1109/VTSA.2007.378964

M3 - Conference contribution

AN - SCOPUS:34548860630

SN - 1424405858

SN - 9781424405855

T3 - International Symposium on VLSI Technology, Systems, and Applications, Proceedings

BT - 2007 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA - Proceedings of Technical Papers

T2 - 2007 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA

Y2 - 23 April 2007 through 25 April 2007

ER -

Wang JS, Chen WPN, Shih CH, Lien C, Su P, Sheu YM et al. Accurate modeling and characterization of mobility in tensile and compressive stress for state-of-the-art manufacturing NMOSFETs. In 2007 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA - Proceedings of Technical Papers. 2007. 4239532. (International Symposium on VLSI Technology, Systems, and Applications, Proceedings). doi: 10.1109/VTSA.2007.378964

Accurate modeling and characterization of mobility in tensile and compressive stress for state-of-the-art manufacturing NMOSFETs

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