AC stress and electronic effects on SET switching of HfO2 RRAM

Jen Chieh Liu, Blanka Magyari-Köpe, Shengjun Qin, Xin Zheng, H. S. Philip Wong, Tuo-Hung Hou

Research output: Contribution to journalArticlepeer-review

2 Scopus citations


An AC stress test was performed to investigate the accompanying electronic effects in a HfO2 resistive random access memory during the SET transition, which featured a sudden decrease in resistance. Comparing the DC and AC measurement results indicated the pronounced influence of interrupted stress on both the mean values and variations of time to SET. First-principles calculations suggested that the charge states (+2, +1, or neutral) of oxygen vacancies affect the migration barrier for forming oxygen vacancy clusters. Therefore, a charge-state-dependent SET model is proposed to include the additional electronic effects induced by the dynamics of electron trapping and detrapping in oxygen vacancies during AC stress. A trimodal Weibull fitting based on the proposed model reproduced the experimental time to SET distributions obtained in a wide range of AC stress conditions.

Original languageEnglish
Article number093502
Number of pages5
JournalApplied Physics Letters
Issue number9
StatePublished - 28 Aug 2017


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