AC stress and electronic effects on SET switching of HfO2 RRAM

Jen Chieh Liu; Blanka Magyari-Köpe; Shengjun Qin; Xin Zheng; H. S. Philip Wong; Tuo-Hung Hou

doi:10.1063/1.4991576

AC stress and electronic effects on SET switching of HfO₂ RRAM

Jen Chieh Liu, Blanka Magyari-Köpe, Shengjun Qin, Xin Zheng, H. S. Philip Wong, Tuo-Hung Hou

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

An AC stress test was performed to investigate the accompanying electronic effects in a HfO₂ resistive random access memory during the SET transition, which featured a sudden decrease in resistance. Comparing the DC and AC measurement results indicated the pronounced influence of interrupted stress on both the mean values and variations of time to SET. First-principles calculations suggested that the charge states (+2, +1, or neutral) of oxygen vacancies affect the migration barrier for forming oxygen vacancy clusters. Therefore, a charge-state-dependent SET model is proposed to include the additional electronic effects induced by the dynamics of electron trapping and detrapping in oxygen vacancies during AC stress. A trimodal Weibull fitting based on the proposed model reproduced the experimental time to SET distributions obtained in a wide range of AC stress conditions.

Original language	English
Article number	093502
Number of pages	5
Journal	Applied Physics Letters
Volume	111
Issue number	9
DOIs	https://doi.org/10.1063/1.4991576
State	Published - 28 Aug 2017

Access to Document

10.1063/1.4991576

Cite this

@article{0d6e158fa731470c9e412022aff38dfa,

title = "AC stress and electronic effects on SET switching of HfO2 RRAM",

abstract = "An AC stress test was performed to investigate the accompanying electronic effects in a HfO2 resistive random access memory during the SET transition, which featured a sudden decrease in resistance. Comparing the DC and AC measurement results indicated the pronounced influence of interrupted stress on both the mean values and variations of time to SET. First-principles calculations suggested that the charge states (+2, +1, or neutral) of oxygen vacancies affect the migration barrier for forming oxygen vacancy clusters. Therefore, a charge-state-dependent SET model is proposed to include the additional electronic effects induced by the dynamics of electron trapping and detrapping in oxygen vacancies during AC stress. A trimodal Weibull fitting based on the proposed model reproduced the experimental time to SET distributions obtained in a wide range of AC stress conditions.",

author = "Liu, {Jen Chieh} and Blanka Magyari-K{\"o}pe and Shengjun Qin and Xin Zheng and {Philip Wong}, {H. S.} and Tuo-Hung Hou",

year = "2017",

month = aug,

day = "28",

doi = "10.1063/1.4991576",

language = "English",

volume = "111",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "9",

}

TY - JOUR

T1 - AC stress and electronic effects on SET switching of HfO2 RRAM

AU - Liu, Jen Chieh

AU - Magyari-Köpe, Blanka

AU - Qin, Shengjun

AU - Zheng, Xin

AU - Philip Wong, H. S.

AU - Hou, Tuo-Hung

PY - 2017/8/28

Y1 - 2017/8/28

N2 - An AC stress test was performed to investigate the accompanying electronic effects in a HfO2 resistive random access memory during the SET transition, which featured a sudden decrease in resistance. Comparing the DC and AC measurement results indicated the pronounced influence of interrupted stress on both the mean values and variations of time to SET. First-principles calculations suggested that the charge states (+2, +1, or neutral) of oxygen vacancies affect the migration barrier for forming oxygen vacancy clusters. Therefore, a charge-state-dependent SET model is proposed to include the additional electronic effects induced by the dynamics of electron trapping and detrapping in oxygen vacancies during AC stress. A trimodal Weibull fitting based on the proposed model reproduced the experimental time to SET distributions obtained in a wide range of AC stress conditions.

AB - An AC stress test was performed to investigate the accompanying electronic effects in a HfO2 resistive random access memory during the SET transition, which featured a sudden decrease in resistance. Comparing the DC and AC measurement results indicated the pronounced influence of interrupted stress on both the mean values and variations of time to SET. First-principles calculations suggested that the charge states (+2, +1, or neutral) of oxygen vacancies affect the migration barrier for forming oxygen vacancy clusters. Therefore, a charge-state-dependent SET model is proposed to include the additional electronic effects induced by the dynamics of electron trapping and detrapping in oxygen vacancies during AC stress. A trimodal Weibull fitting based on the proposed model reproduced the experimental time to SET distributions obtained in a wide range of AC stress conditions.

UR - http://www.scopus.com/inward/record.url?scp=85028549733&partnerID=8YFLogxK

U2 - 10.1063/1.4991576

DO - 10.1063/1.4991576

M3 - Article

AN - SCOPUS:85028549733

SN - 0003-6951

VL - 111

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 9

M1 - 093502

ER -

AC stress and electronic effects on SET switching of HfO₂ RRAM

Abstract

Access to Document

Other files and links

Fingerprint

Cite this