Abnormal ESD Failure Mechanism in High-Pin-Count BGA Packaged ICs Due to Stressing Nonconnected Balls

Wen Yu Lo; Ming-Dou Ker

doi:10.1109/TDMR.2004.824362

Abnormal ESD Failure Mechanism in High-Pin-Count BGA Packaged ICs Due to Stressing Nonconnected Balls

Wen Yu Lo^*, Ming-Dou Ker

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

An abnormal failure mechanism due to ESD pulse applied on the nonconnected (NC) solder balls of a high-pin-count (683 balls) BGA packaged chipset IC is presented. The ESD test results of the IC product were found below human-body-model (HBM) 2 kV when stressing all balls or only stressing NC balls, but above HBM 3 kV when stressing all balls excluding NC balls. Failure analyses, including scanning electron microscopy (SEM) photographs and the measurement of current waveforms during ESD discharging event, have been performed. With a new proposed equivalent model, a clear explanation on this unusual phenomenon is found to have a high correlation to the small capacitor method (SCM). Several solutions to overcome this failure mechanism are also discussed.

Original language	English
Pages (from-to)	24-31
Number of pages	8
Journal	IEEE Transactions on Device and Materials Reliability
Volume	4
Issue number	1
DOIs	https://doi.org/10.1109/TDMR.2004.824362
State	Published - 1 Mar 2004

Keywords

Ball grid array (BGA)
Charged-device model (CDM)
Electrostatic discharge (ESD)
Scanning electron microscopy (SEM)
Small capacitor method (SCM)

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10.1109/TDMR.2004.824362

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title = "Abnormal ESD Failure Mechanism in High-Pin-Count BGA Packaged ICs Due to Stressing Nonconnected Balls",

abstract = "An abnormal failure mechanism due to ESD pulse applied on the nonconnected (NC) solder balls of a high-pin-count (683 balls) BGA packaged chipset IC is presented. The ESD test results of the IC product were found below human-body-model (HBM) 2 kV when stressing all balls or only stressing NC balls, but above HBM 3 kV when stressing all balls excluding NC balls. Failure analyses, including scanning electron microscopy (SEM) photographs and the measurement of current waveforms during ESD discharging event, have been performed. With a new proposed equivalent model, a clear explanation on this unusual phenomenon is found to have a high correlation to the small capacitor method (SCM). Several solutions to overcome this failure mechanism are also discussed.",

keywords = "Ball grid array (BGA), Charged-device model (CDM), Electrostatic discharge (ESD), Scanning electron microscopy (SEM), Small capacitor method (SCM)",

author = "Lo, {Wen Yu} and Ming-Dou Ker",

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publisher = "Institute of Electrical and Electronics Engineers Inc.",

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T1 - Abnormal ESD Failure Mechanism in High-Pin-Count BGA Packaged ICs Due to Stressing Nonconnected Balls

AU - Lo, Wen Yu

AU - Ker, Ming-Dou

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N2 - An abnormal failure mechanism due to ESD pulse applied on the nonconnected (NC) solder balls of a high-pin-count (683 balls) BGA packaged chipset IC is presented. The ESD test results of the IC product were found below human-body-model (HBM) 2 kV when stressing all balls or only stressing NC balls, but above HBM 3 kV when stressing all balls excluding NC balls. Failure analyses, including scanning electron microscopy (SEM) photographs and the measurement of current waveforms during ESD discharging event, have been performed. With a new proposed equivalent model, a clear explanation on this unusual phenomenon is found to have a high correlation to the small capacitor method (SCM). Several solutions to overcome this failure mechanism are also discussed.

AB - An abnormal failure mechanism due to ESD pulse applied on the nonconnected (NC) solder balls of a high-pin-count (683 balls) BGA packaged chipset IC is presented. The ESD test results of the IC product were found below human-body-model (HBM) 2 kV when stressing all balls or only stressing NC balls, but above HBM 3 kV when stressing all balls excluding NC balls. Failure analyses, including scanning electron microscopy (SEM) photographs and the measurement of current waveforms during ESD discharging event, have been performed. With a new proposed equivalent model, a clear explanation on this unusual phenomenon is found to have a high correlation to the small capacitor method (SCM). Several solutions to overcome this failure mechanism are also discussed.

KW - Ball grid array (BGA)

KW - Charged-device model (CDM)

KW - Electrostatic discharge (ESD)

KW - Scanning electron microscopy (SEM)

KW - Small capacitor method (SCM)

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Abnormal ESD Failure Mechanism in High-Pin-Count BGA Packaged ICs Due to Stressing Nonconnected Balls

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Keywords

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