Abnormal ESD damages occur in interface circuits between different power domains in ND-mode MM ESD stress

Hsiang Pin Hung; Ming-Dou Ker; Shih Hung Chen; Che Hao Chuang

doi:10.1109/IPFA.2006.251021

Abnormal ESD damages occur in interface circuits between different power domains in ND-mode MM ESD stress

Hsiang Pin Hung^*, Ming-Dou Ker, Shih Hung Chen, Che Hao Chuang

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

6 Scopus citations

Abstract

Complex ESD failure mechanisms have been found in the interface circuits of an IC product with multiple separated power domains. The MM ESD robustness can not achieve 150 V in this IC product with separated power domains, although it has the 2-kV HBM ESD robustness. The ND-mode MM ESD currents were discharged by circuitous current paths through interface circuits to cause the gate oxide damage, junction filament, and contact destroy of the internal transistors. The detailed discharging paths of each ND-mode ESD failure were analysed in this paper.

Original language	English
Title of host publication	Proceedings of 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2006
Pages	163-166
Number of pages	4
DOIs	https://doi.org/10.1109/IPFA.2006.251021
State	Published - 1 Dec 2006
Event	13th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2006 - Singapore, Singapore Duration: 3 Jul 2006 → 7 Jul 2006

Publication series

Name	Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA

Conference

Conference	13th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2006
Country/Territory	Singapore
City	Singapore
Period	3/07/06 → 7/07/06

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10.1109/IPFA.2006.251021

Cite this

Hung, H. P., Ker, M-D., Chen, S. H., & Chuang, C. H. (2006). Abnormal ESD damages occur in interface circuits between different power domains in ND-mode MM ESD stress. In Proceedings of 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2006 (pp. 163-166). [4017046] (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA). https://doi.org/10.1109/IPFA.2006.251021

Hung, Hsiang Pin ; Ker, Ming-Dou ; Chen, Shih Hung et al. / Abnormal ESD damages occur in interface circuits between different power domains in ND-mode MM ESD stress. Proceedings of 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2006. 2006. pp. 163-166 (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA).

@inproceedings{cd5735f6ef7b459f83f1a2af02dcfa07,

title = "Abnormal ESD damages occur in interface circuits between different power domains in ND-mode MM ESD stress",

abstract = "Complex ESD failure mechanisms have been found in the interface circuits of an IC product with multiple separated power domains. The MM ESD robustness can not achieve 150 V in this IC product with separated power domains, although it has the 2-kV HBM ESD robustness. The ND-mode MM ESD currents were discharged by circuitous current paths through interface circuits to cause the gate oxide damage, junction filament, and contact destroy of the internal transistors. The detailed discharging paths of each ND-mode ESD failure were analysed in this paper.",

author = "Hung, {Hsiang Pin} and Ming-Dou Ker and Chen, {Shih Hung} and Chuang, {Che Hao}",

year = "2006",

month = dec,

day = "1",

doi = "10.1109/IPFA.2006.251021",

language = "English",

isbn = "1424402069",

series = "Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA",

pages = "163--166",

booktitle = "Proceedings of 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2006",

note = "13th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2006 ; Conference date: 03-07-2006 Through 07-07-2006",

}

Hung, HP, Ker, M-D, Chen, SH & Chuang, CH 2006, Abnormal ESD damages occur in interface circuits between different power domains in ND-mode MM ESD stress. in Proceedings of 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2006., 4017046, Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA, pp. 163-166, 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2006, Singapore, Singapore, 3/07/06. https://doi.org/10.1109/IPFA.2006.251021

Abnormal ESD damages occur in interface circuits between different power domains in ND-mode MM ESD stress. / Hung, Hsiang Pin; Ker, Ming-Dou; Chen, Shih Hung et al.
Proceedings of 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2006. 2006. p. 163-166 4017046 (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Chuang, Che Hao

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N2 - Complex ESD failure mechanisms have been found in the interface circuits of an IC product with multiple separated power domains. The MM ESD robustness can not achieve 150 V in this IC product with separated power domains, although it has the 2-kV HBM ESD robustness. The ND-mode MM ESD currents were discharged by circuitous current paths through interface circuits to cause the gate oxide damage, junction filament, and contact destroy of the internal transistors. The detailed discharging paths of each ND-mode ESD failure were analysed in this paper.

AB - Complex ESD failure mechanisms have been found in the interface circuits of an IC product with multiple separated power domains. The MM ESD robustness can not achieve 150 V in this IC product with separated power domains, although it has the 2-kV HBM ESD robustness. The ND-mode MM ESD currents were discharged by circuitous current paths through interface circuits to cause the gate oxide damage, junction filament, and contact destroy of the internal transistors. The detailed discharging paths of each ND-mode ESD failure were analysed in this paper.

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SN - 9781424402069

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Hung HP, Ker M-D, Chen SH, Chuang CH. Abnormal ESD damages occur in interface circuits between different power domains in ND-mode MM ESD stress. In Proceedings of 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2006. 2006. p. 163-166. 4017046. (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA). doi: 10.1109/IPFA.2006.251021

Abnormal ESD damages occur in interface circuits between different power domains in ND-mode MM ESD stress

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