A Wideband Linear GaN-on-SiC Power Amplifier using Harmonic-Tuning Technique for 5G NewRadio FR2 Applications

Yi Fan Tsao*, Heng Tung Hsu

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

A highly linear power amplifier (PA) utilizing stacked-FET configuration and harmonic-tuning technique targeting for millimeter-wave applications is presented in this work. Fabricated using standard 150-nm GaN/SiC device technology, a small-signal gain of 23.7 dB, a peak power-added-efficiency (PAE) of 37.7%, and a saturated output power (Psat) of 30.8 dBm was evaluated with continuous-wave (CW) excitation at 38 GHz, respectively. With the characterization using a standard 200 MHz 64-quadrature-amplitude-modulation (QAM) 5G new-ratio (NR) signal, the fabricated PA exhibited an error-vector-magnitude (EVM) of -27.9 dB with an average PAE of 21.4% while delivering an average output power of 25.1 dBm at 38 GHz. The experimental results have evidenced that the design technique is capable of achieving wide harmonic-tuning range for millimeter-wave amplifiers requiring high linearity and enhancement in overall efficiency.

Original languageEnglish
Title of host publicationISCAS 2024 - IEEE International Symposium on Circuits and Systems
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9798350330991
DOIs
StatePublished - 2024
Event2024 IEEE International Symposium on Circuits and Systems, ISCAS 2024 - Singapore, Singapore
Duration: 19 May 202422 May 2024

Publication series

NameProceedings - IEEE International Symposium on Circuits and Systems
ISSN (Print)0271-4310

Conference

Conference2024 IEEE International Symposium on Circuits and Systems, ISCAS 2024
Country/TerritorySingapore
CitySingapore
Period19/05/2422/05/24

Keywords

  • 5G new radio (NR)
  • GaN-on-SiC
  • Harmonic-tuning
  • linearity
  • power amplifier

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