A W-Band 1-dB Insertion Loss Wilkinson Power Divider Using Silicon-Based Integrated Passive Device

Chiao Yun Hsiao; Chung Tse Michael Wu; Chien Nan Kuo

doi:10.1109/LMWC.2021.3066344

A W-Band 1-dB Insertion Loss Wilkinson Power Divider Using Silicon-Based Integrated Passive Device

Chiao Yun Hsiao, Chung Tse Michael Wu, Chien Nan Kuo^*

^*Corresponding author for this work

Institute of Electronics

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

This work presents an on-chip Wilkinson power divider using silicon-based integrated passive device (IPD) technology that operates from 70 to 110 GHz, thereby covering the entire W-band (75-110 GHz). Based on a simple impedance transformation different from the conventional Wilkinson power divider topology, the proposed silicon IPD power divider with a core size of 0.417 mm2 can demonstrate power loss of less than 1.1 dB along with input-output return loss better than 14 dB throughout the entire band.

Original language	English
Article number	9380427
Pages (from-to)	654-657
Number of pages	4
Journal	IEEE Microwave and Wireless Components Letters
Volume	31
Issue number	6
DOIs	https://doi.org/10.1109/LMWC.2021.3066344
State	Published - Jun 2021

Keywords

Integrated passive device (IPD)
millimeter-wave (mm-wave)
on-chip coupler
W-band
Wilkinson power divider

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10.1109/LMWC.2021.3066344

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title = "A W-Band 1-dB Insertion Loss Wilkinson Power Divider Using Silicon-Based Integrated Passive Device",

abstract = "This work presents an on-chip Wilkinson power divider using silicon-based integrated passive device (IPD) technology that operates from 70 to 110 GHz, thereby covering the entire W-band (75-110 GHz). Based on a simple impedance transformation different from the conventional Wilkinson power divider topology, the proposed silicon IPD power divider with a core size of 0.417 mm2 can demonstrate power loss of less than 1.1 dB along with input-output return loss better than 14 dB throughout the entire band. ",

keywords = "Integrated passive device (IPD), millimeter-wave (mm-wave), on-chip coupler, W-band, Wilkinson power divider",

author = "Hsiao, {Chiao Yun} and Wu, {Chung Tse Michael} and Kuo, {Chien Nan}",

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AU - Wu, Chung Tse Michael

AU - Kuo, Chien Nan

PY - 2021/6

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AB - This work presents an on-chip Wilkinson power divider using silicon-based integrated passive device (IPD) technology that operates from 70 to 110 GHz, thereby covering the entire W-band (75-110 GHz). Based on a simple impedance transformation different from the conventional Wilkinson power divider topology, the proposed silicon IPD power divider with a core size of 0.417 mm2 can demonstrate power loss of less than 1.1 dB along with input-output return loss better than 14 dB throughout the entire band.

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KW - millimeter-wave (mm-wave)

KW - on-chip coupler

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JF - IEEE Microwave and Wireless Components Letters

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M1 - 9380427

ER -

A W-Band 1-dB Insertion Loss Wilkinson Power Divider Using Silicon-Based Integrated Passive Device

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