TY - GEN
T1 - A unified surface potential based physical compact model for both unipolar and ambipolar 2D-FET
T2 - 63rd IEEE International Electron Devices Meeting, IEDM 2017
AU - Wang, Lingfei
AU - Li, Yang
AU - Feng, Xuewei
AU - Ang, Kah Wee
AU - Gong, Xiao
AU - Thean, Aaron
AU - Liang, Gengchiau
N1 - Publisher Copyright:
© 2017 IEEE.
PY - 2018/1/23
Y1 - 2018/1/23
N2 - For the first time, a unified surface potential based physical compact model for both unipolar and ambipolar two-dimensional material field effect transistors (2D-FETs) is developed and verified by experimental data. This model is based on the theories of effective transport energy, generalized Einstein relation and multiple defect-induced trapping dynamics. The temperature and carrier density dependent transport (e.g. variable range hopping and nearest neighbour hopping) and metal insulator transition behavior (e.g. hopping to bandlike) are physically incorporated. The predicted transfer and output characteristics of black phosphorous-, WS2- and MoS2-FETs have excellent quantitative agreement with experimental results. Furthermore, the benchmark of temperature dependent characteristics also confirms the validity of this proposed model. These demonstrate its capability for obtaining deeper understanding on device physics, performance and further optimization. Finally, the compact model is implemented in Verilog-A to evaluate the possibility of using 2D-FETs for digital and RF applications.
AB - For the first time, a unified surface potential based physical compact model for both unipolar and ambipolar two-dimensional material field effect transistors (2D-FETs) is developed and verified by experimental data. This model is based on the theories of effective transport energy, generalized Einstein relation and multiple defect-induced trapping dynamics. The temperature and carrier density dependent transport (e.g. variable range hopping and nearest neighbour hopping) and metal insulator transition behavior (e.g. hopping to bandlike) are physically incorporated. The predicted transfer and output characteristics of black phosphorous-, WS2- and MoS2-FETs have excellent quantitative agreement with experimental results. Furthermore, the benchmark of temperature dependent characteristics also confirms the validity of this proposed model. These demonstrate its capability for obtaining deeper understanding on device physics, performance and further optimization. Finally, the compact model is implemented in Verilog-A to evaluate the possibility of using 2D-FETs for digital and RF applications.
UR - http://www.scopus.com/inward/record.url?scp=85045223084&partnerID=8YFLogxK
U2 - 10.1109/IEDM.2017.8268481
DO - 10.1109/IEDM.2017.8268481
M3 - Conference contribution
AN - SCOPUS:85045223084
T3 - Technical Digest - International Electron Devices Meeting, IEDM
SP - 31.4.1-31.4.4
BT - 2017 IEEE International Electron Devices Meeting, IEDM 2017
PB - Institute of Electrical and Electronics Engineers Inc.
Y2 - 2 December 2017 through 6 December 2017
ER -