A Unified Statistical Analysis of Comprehensive Fluctuations of Gate-All-Around Silicon Nanosheet MOSFETs Induced by RDF, ITF, and WKF Simultaneously

Sekhar Reddy Kola, Yiming Li*, Chieh Yang Chen, Min Hui Chuang

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

5 Scopus citations

Abstract

We for the first time investigate comprehensive electrical characteristic fluctuation of gate-all-around silicon nanosheet metal-oxide-semiconductor field-effect transistors. The comprehensive fluctuation signifies the work function fluctuation, interface trap fluctuation, and random dopant fluctuation, simultaneously. Due to a complicated interaction of surface potential among fluctuation sources, simply considering each fluctuation source and calculating their total fluctuation will result in overestimated results, compared with the result of comprehensive fluctuation. 10.8% and 48.8% overestimations are observed for the threshold voltage and off-state current fluctuations. Notably, the characteristic fluctuation of the explored device is dominated by work function fluctuation because the channel surface potential is strongly altered by randomly localized work functions.

Original languageEnglish
Title of host publicationProceedings of the 23rd International Symposium on Quality Electronic Design, ISQED 2022
PublisherIEEE Computer Society
ISBN (Electronic)9781665494663
DOIs
StatePublished - 2022
Event23rd International Symposium on Quality Electronic Design, ISQED 2022 - Santa Jose, United States
Duration: 6 Apr 20227 Apr 2022

Publication series

NameProceedings - International Symposium on Quality Electronic Design, ISQED
Volume2022-April
ISSN (Print)1948-3287
ISSN (Electronic)1948-3295

Conference

Conference23rd International Symposium on Quality Electronic Design, ISQED 2022
Country/TerritoryUnited States
CitySanta Jose
Period6/04/227/04/22

Keywords

  • GAA Si NS MOSFET
  • interface trap fluctuation
  • random dopant fluctuation
  • statistical device simulation
  • work function fluctuation

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