TY - GEN
T1 - A Unified Statistical Analysis of Comprehensive Fluctuations of Gate-All-Around Silicon Nanosheet MOSFETs Induced by RDF, ITF, and WKF Simultaneously
AU - Kola, Sekhar Reddy
AU - Li, Yiming
AU - Chen, Chieh Yang
AU - Chuang, Min Hui
N1 - Publisher Copyright:
© 2022 IEEE.
PY - 2022
Y1 - 2022
N2 - We for the first time investigate comprehensive electrical characteristic fluctuation of gate-all-around silicon nanosheet metal-oxide-semiconductor field-effect transistors. The comprehensive fluctuation signifies the work function fluctuation, interface trap fluctuation, and random dopant fluctuation, simultaneously. Due to a complicated interaction of surface potential among fluctuation sources, simply considering each fluctuation source and calculating their total fluctuation will result in overestimated results, compared with the result of comprehensive fluctuation. 10.8% and 48.8% overestimations are observed for the threshold voltage and off-state current fluctuations. Notably, the characteristic fluctuation of the explored device is dominated by work function fluctuation because the channel surface potential is strongly altered by randomly localized work functions.
AB - We for the first time investigate comprehensive electrical characteristic fluctuation of gate-all-around silicon nanosheet metal-oxide-semiconductor field-effect transistors. The comprehensive fluctuation signifies the work function fluctuation, interface trap fluctuation, and random dopant fluctuation, simultaneously. Due to a complicated interaction of surface potential among fluctuation sources, simply considering each fluctuation source and calculating their total fluctuation will result in overestimated results, compared with the result of comprehensive fluctuation. 10.8% and 48.8% overestimations are observed for the threshold voltage and off-state current fluctuations. Notably, the characteristic fluctuation of the explored device is dominated by work function fluctuation because the channel surface potential is strongly altered by randomly localized work functions.
KW - GAA Si NS MOSFET
KW - interface trap fluctuation
KW - random dopant fluctuation
KW - statistical device simulation
KW - work function fluctuation
UR - http://www.scopus.com/inward/record.url?scp=85133738078&partnerID=8YFLogxK
U2 - 10.1109/ISQED54688.2022.9806229
DO - 10.1109/ISQED54688.2022.9806229
M3 - Conference contribution
AN - SCOPUS:85133738078
T3 - Proceedings - International Symposium on Quality Electronic Design, ISQED
BT - Proceedings of the 23rd International Symposium on Quality Electronic Design, ISQED 2022
PB - IEEE Computer Society
T2 - 23rd International Symposium on Quality Electronic Design, ISQED 2022
Y2 - 6 April 2022 through 7 April 2022
ER -