A UNIFIED MODEL FOR HOT-ELECTRON CURRENTS IN MOSFETS.

P. K. Ko^*, R. S. Muller, Chen-Ming Hu

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

101 Scopus citations

Original language	English
Pages (from-to)	600-603
Number of pages	4
Journal	Technical Digest - International Electron Devices Meeting
DOIs	https://doi.org/10.1109/IEDM.1981.190156
State	Published - 1 Dec 1981

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@article{725dce1099304553a79ee33186d84457,

title = "A UNIFIED MODEL FOR HOT-ELECTRON CURRENTS IN MOSFETS.",

author = "Ko, {P. K.} and Muller, {R. S.} and Chen-Ming Hu",

year = "1981",

month = dec,

day = "1",

doi = "10.1109/IEDM.1981.190156",

language = "English",

pages = "600--603",

journal = "Technical Digest - International Electron Devices Meeting",

issn = "0163-1918",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

}

TY - JOUR

T1 - A UNIFIED MODEL FOR HOT-ELECTRON CURRENTS IN MOSFETS.

AU - Ko, P. K.

AU - Muller, R. S.

AU - Hu, Chen-Ming

PY - 1981/12/1

Y1 - 1981/12/1

UR - http://www.scopus.com/inward/record.url?scp=0019664378&partnerID=8YFLogxK

U2 - 10.1109/IEDM.1981.190156

DO - 10.1109/IEDM.1981.190156

M3 - Conference article

AN - SCOPUS:0019664378

SP - 600

EP - 603

JO - Technical Digest - International Electron Devices Meeting

JF - Technical Digest - International Electron Devices Meeting

SN - 0163-1918

ER -