@inproceedings{c1b17f8603924515b377411c18872033,
title = "A Unified Flicker Noise Model for FDSOI MOSFETs Including Back-bias Effect",
abstract = "A physics-based unified flicker noise model for FDSOI transistor is proposed. Flicker noise power spectral density (PSD) at the front and back interfaces are calculated using oxide-trap-induced carrier number (CNF) and correlated surface mobility fluctuation (CMF) mechanisms. The model predicts correct flicker noise behavior from weak inversion region to strong inversion region for a wide range of the front and backgate voltages. The proposed model is computationally efficient and implementable in any SPICE model for circuit simulations.",
author = "Pragya Kushwaha and Harshit Agarwal and Dabhi, {Chetan Kumar} and Lin, {Yen Kai} and Duarte, {J. P.} and Chen-Ming Hu and Chauhan, {Yogesh Singh}",
year = "2018",
month = oct,
day = "4",
doi = "10.1109/CONECCT.2018.8482376",
language = "English",
series = "2018 IEEE International Conference on Electronics, Computing and Communication Technologies, CONECCT 2018",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2018 IEEE International Conference on Electronics, Computing and Communication Technologies, CONECCT 2018",
address = "United States",
note = "2018 IEEE International Conference on Electronics, Computing and Communication Technologies, CONECCT 2018 ; Conference date: 16-03-2018 Through 17-03-2018",
}