A unified behavior model of low noise amplifier for system-level simulation

Chih De Hung*, Wen Shen Wuen, Mei Fen Chou, Kuei Ann Wen

*Corresponding author for this work

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    Abstract

    This paper presents a unified RF behavior model that simultaneously predicts the effects of noise, nonlinearity, impedance matching and frequency response and that enables efficient and accurate system simulation. The proposed modeling approach allows characterizing the RF effects incrementally to reduce iteration. A Verilog-A behavior model for an ultra-wideband CMOS low noise amplifier is developed for fast and accurate system simulation. The system simulation results show that the behavior model agrees well with the transistorlevel circuit with RMS error less than 0.79%. Ultimately, 87% reduction of simulation time is achieved.

    Original languageEnglish
    Title of host publicationProceedings of the 9th European Conference on Wireless Technology, ECWT 2006
    PublisherIEEE Computer Society
    Pages139-142
    Number of pages4
    ISBN (Print)2960055152, 9782960055153
    DOIs
    StatePublished - 1 Jan 2006
    Event9th European Conference on Wireless Technology, ECWT 2006 - Manchester, United Kingdom
    Duration: 10 Sep 200612 Sep 2006

    Publication series

    NameProceedings of the 9th European Conference on Wireless Technology, ECWT 2006

    Conference

    Conference9th European Conference on Wireless Technology, ECWT 2006
    Country/TerritoryUnited Kingdom
    CityManchester
    Period10/09/0612/09/06

    Keywords

    • Low noise amplifier
    • RF behavior model

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