A Temperature Compensated 61-W Class-E Soft-Switching GaN-Based Active Diode Rectifier for Wireless Power Transfer Applications

Shang Hsien Yang; Ke-Horng Chen; Ying Hsi Lin; Shian Ru Lin; Tsung Yen Tsai

doi:10.1109/LSSC.2019.2930912

A Temperature Compensated 61-W Class-E Soft-Switching GaN-Based Active Diode Rectifier for Wireless Power Transfer Applications

Shang Hsien Yang, Ke-Horng Chen^*, Ying Hsi Lin, Shian Ru Lin, Tsung Yen Tsai

^*Corresponding author for this work

Department of Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

The proposed 6.78-MHz Class-E receiver features a soft-switching and temperature-compensated GaN-based active diode (GAD) rectifier design. Using the temperature dependence of the relationship between the driving voltage and the on-resistance of the switch, the gate-source control voltage of GaN can be adjusted to mitigate efficiency variations based on temperature effects. Moreover, a phase shift comparator activation controller is based on the direct relationship between the phase delay on the gate drive signals and the output power. The temperature dependency voltage offset of the comparator is alleviated with auto-zeroing. GAD rectifier ensures energy transfer up to 61 W and 6.8 A, high efficiency of 92%, and low harmonic distortion of 2.1%.

Original language	English
Article number	8877965
Pages (from-to)	203-206
Number of pages	4
Journal	IEEE Solid-State Circuits Letters
Volume	2
Issue number	9
DOIs	https://doi.org/10.1109/LSSC.2019.2930912
State	Published - Sep 2019

Keywords

Auto-zeroing (AZ)
GaN
soft-switching
temperature compensation
wireless power transfer

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10.1109/LSSC.2019.2930912

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title = "A Temperature Compensated 61-W Class-E Soft-Switching GaN-Based Active Diode Rectifier for Wireless Power Transfer Applications",

abstract = "The proposed 6.78-MHz Class-E receiver features a soft-switching and temperature-compensated GaN-based active diode (GAD) rectifier design. Using the temperature dependence of the relationship between the driving voltage and the on-resistance of the switch, the gate-source control voltage of GaN can be adjusted to mitigate efficiency variations based on temperature effects. Moreover, a phase shift comparator activation controller is based on the direct relationship between the phase delay on the gate drive signals and the output power. The temperature dependency voltage offset of the comparator is alleviated with auto-zeroing. GAD rectifier ensures energy transfer up to 61 W and 6.8 A, high efficiency of 92%, and low harmonic distortion of 2.1%.",

keywords = "Auto-zeroing (AZ), GaN, soft-switching, temperature compensation, wireless power transfer",

author = "Yang, {Shang Hsien} and Ke-Horng Chen and Lin, {Ying Hsi} and Lin, {Shian Ru} and Tsai, {Tsung Yen}",

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AU - Yang, Shang Hsien

AU - Chen, Ke-Horng

AU - Lin, Ying Hsi

AU - Lin, Shian Ru

AU - Tsai, Tsung Yen

PY - 2019/9

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AB - The proposed 6.78-MHz Class-E receiver features a soft-switching and temperature-compensated GaN-based active diode (GAD) rectifier design. Using the temperature dependence of the relationship between the driving voltage and the on-resistance of the switch, the gate-source control voltage of GaN can be adjusted to mitigate efficiency variations based on temperature effects. Moreover, a phase shift comparator activation controller is based on the direct relationship between the phase delay on the gate drive signals and the output power. The temperature dependency voltage offset of the comparator is alleviated with auto-zeroing. GAD rectifier ensures energy transfer up to 61 W and 6.8 A, high efficiency of 92%, and low harmonic distortion of 2.1%.

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A Temperature Compensated 61-W Class-E Soft-Switching GaN-Based Active Diode Rectifier for Wireless Power Transfer Applications

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Keywords

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