A temperature accelerated model for high state retention loss of nitride storage flash memory

M. Y. Lee; N. K. Zous; Trista Huang; W. J. Tsai; Albert Kuo; Ta-Hui Wang; Shaw Yin; Chih Yuan Lu

doi:10.1109/IRWS.2004.1422728

A temperature accelerated model for high state retention loss of nitride storage flash memory

M. Y. Lee^*, N. K. Zous, Trista Huang, W. J. Tsai, Albert Kuo, Ta-Hui Wang, Shaw Yin, Chih Yuan Lu

^*Corresponding author for this work

Research output: Contribution to conference › Paper › peer-review

2 Scopus citations

Abstract

A temperate accelerating model, which bases on the tunneling out of the thermally emitted electrons in the nitride layer via traps at the bottom oxide, is proposed to explain the retention loss behavior of high VT states at MXVAND products with respect to bake temperature, bake time, and cycling numbers. The model parameters can be easily extracted and the fitting results show an acceptable accuracy. According to this model, the retention loss should follow a straight line on a semi-log scale and the slope is proportional to the temperature. Besides, the cycling number dependence is successfully reproduced by considering the erase degradation and the growth rate of oxide traps.

Original language	English
Pages	11-14
Number of pages	4
DOIs	https://doi.org/10.1109/IRWS.2004.1422728
State	Published - Oct 2004
Event	2004 IEEE International Integrated Reliability Workshop Final Report - S. Lake Tahoe, CA, United States Duration: 18 Oct 2004 → 21 Oct 2004

Conference

Conference	2004 IEEE International Integrated Reliability Workshop Final Report
Country/Territory	United States
City	S. Lake Tahoe, CA
Period	18/10/04 → 21/10/04

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10.1109/IRWS.2004.1422728

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title = "A temperature accelerated model for high state retention loss of nitride storage flash memory",

abstract = "A temperate accelerating model, which bases on the tunneling out of the thermally emitted electrons in the nitride layer via traps at the bottom oxide, is proposed to explain the retention loss behavior of high VT states at MXVAND products with respect to bake temperature, bake time, and cycling numbers. The model parameters can be easily extracted and the fitting results show an acceptable accuracy. According to this model, the retention loss should follow a straight line on a semi-log scale and the slope is proportional to the temperature. Besides, the cycling number dependence is successfully reproduced by considering the erase degradation and the growth rate of oxide traps.",

author = "Lee, {M. Y.} and Zous, {N. K.} and Trista Huang and Tsai, {W. J.} and Albert Kuo and Ta-Hui Wang and Shaw Yin and Lu, {Chih Yuan}",

year = "2004",

month = oct,

doi = "10.1109/IRWS.2004.1422728",

language = "English",

pages = "11--14",

note = "2004 IEEE International Integrated Reliability Workshop Final Report ; Conference date: 18-10-2004 Through 21-10-2004",

}

Lee, MY, Zous, NK, Huang, T, Tsai, WJ, Kuo, A, Wang, T-H, Yin, S & Lu, CY 2004, 'A temperature accelerated model for high state retention loss of nitride storage flash memory', Paper presented at 2004 IEEE International Integrated Reliability Workshop Final Report, S. Lake Tahoe, CA, United States, 18/10/04 - 21/10/04 pp. 11-14. https://doi.org/10.1109/IRWS.2004.1422728

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T1 - A temperature accelerated model for high state retention loss of nitride storage flash memory

AU - Lee, M. Y.

AU - Zous, N. K.

AU - Huang, Trista

AU - Tsai, W. J.

AU - Kuo, Albert

AU - Wang, Ta-Hui

AU - Yin, Shaw

AU - Lu, Chih Yuan

PY - 2004/10

Y1 - 2004/10

N2 - A temperate accelerating model, which bases on the tunneling out of the thermally emitted electrons in the nitride layer via traps at the bottom oxide, is proposed to explain the retention loss behavior of high VT states at MXVAND products with respect to bake temperature, bake time, and cycling numbers. The model parameters can be easily extracted and the fitting results show an acceptable accuracy. According to this model, the retention loss should follow a straight line on a semi-log scale and the slope is proportional to the temperature. Besides, the cycling number dependence is successfully reproduced by considering the erase degradation and the growth rate of oxide traps.

AB - A temperate accelerating model, which bases on the tunneling out of the thermally emitted electrons in the nitride layer via traps at the bottom oxide, is proposed to explain the retention loss behavior of high VT states at MXVAND products with respect to bake temperature, bake time, and cycling numbers. The model parameters can be easily extracted and the fitting results show an acceptable accuracy. According to this model, the retention loss should follow a straight line on a semi-log scale and the slope is proportional to the temperature. Besides, the cycling number dependence is successfully reproduced by considering the erase degradation and the growth rate of oxide traps.

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U2 - 10.1109/IRWS.2004.1422728

DO - 10.1109/IRWS.2004.1422728

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EP - 14

T2 - 2004 IEEE International Integrated Reliability Workshop Final Report

Y2 - 18 October 2004 through 21 October 2004

ER -

A temperature accelerated model for high state retention loss of nitride storage flash memory

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