A Surface Potential- and Physics- Based Compact Model for 2D Polycrystalline-MoS2FET with Resistive Switching Behavior in Neuromorphic Computing

Lingfei Wang, Lin Weng, Kah Wee Ang, Aaron Voon Yew Thean, Gengchiau Liang

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

3 Scopus citations

Abstract

For the first time, a surface potential- and physics-based compact model for two dimensional (2D) polycrystalline-molybdenum disulfide (MoS2) field effect transistors (FETs) with resistive switching (RS) behavior is developed and verified by experimental data. This model is incorporated with the theories of thermal activation transport, grain boundary (GB) barrier and space charge limited current (SCLC). Based on the GB induced disorders, the grain size, low temperature and high electrical field dependent characteristics are studied. The predicted transfer and output characteristics have excellent quantitative agreement with experimental results. Furthermore, considering the hopping process induced defect- (i.e., sulfur vacancy) redistribution, the GB (e.g., intersecting or bisecting GB) dependent resistive switching behavior is physically investigated. Finally, this model is implemented to simulate the synaptic activity such as short-term/long-term plasticity, which indicates the possibility of using 2D-FETs for neuromorphic computing applications.

Original languageEnglish
Title of host publication2018 IEEE International Electron Devices Meeting, IEDM 2018
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages24.5.1-24.5.4
ISBN (Electronic)9781728119878
DOIs
StatePublished - 2 Jul 2018
Event64th Annual IEEE International Electron Devices Meeting, IEDM 2018 - San Francisco, United States
Duration: 1 Dec 20185 Dec 2018

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
Volume2018-December
ISSN (Print)0163-1918

Conference

Conference64th Annual IEEE International Electron Devices Meeting, IEDM 2018
Country/TerritoryUnited States
CitySan Francisco
Period1/12/185/12/18

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