TY - GEN
T1 - A Surface Potential- and Physics- Based Compact Model for 2D Polycrystalline-MoS2FET with Resistive Switching Behavior in Neuromorphic Computing
AU - Wang, Lingfei
AU - Weng, Lin
AU - Ang, Kah Wee
AU - Thean, Aaron Voon Yew
AU - Liang, Gengchiau
N1 - Publisher Copyright:
© 2018 IEEE.
PY - 2018/7/2
Y1 - 2018/7/2
N2 - For the first time, a surface potential- and physics-based compact model for two dimensional (2D) polycrystalline-molybdenum disulfide (MoS2) field effect transistors (FETs) with resistive switching (RS) behavior is developed and verified by experimental data. This model is incorporated with the theories of thermal activation transport, grain boundary (GB) barrier and space charge limited current (SCLC). Based on the GB induced disorders, the grain size, low temperature and high electrical field dependent characteristics are studied. The predicted transfer and output characteristics have excellent quantitative agreement with experimental results. Furthermore, considering the hopping process induced defect- (i.e., sulfur vacancy) redistribution, the GB (e.g., intersecting or bisecting GB) dependent resistive switching behavior is physically investigated. Finally, this model is implemented to simulate the synaptic activity such as short-term/long-term plasticity, which indicates the possibility of using 2D-FETs for neuromorphic computing applications.
AB - For the first time, a surface potential- and physics-based compact model for two dimensional (2D) polycrystalline-molybdenum disulfide (MoS2) field effect transistors (FETs) with resistive switching (RS) behavior is developed and verified by experimental data. This model is incorporated with the theories of thermal activation transport, grain boundary (GB) barrier and space charge limited current (SCLC). Based on the GB induced disorders, the grain size, low temperature and high electrical field dependent characteristics are studied. The predicted transfer and output characteristics have excellent quantitative agreement with experimental results. Furthermore, considering the hopping process induced defect- (i.e., sulfur vacancy) redistribution, the GB (e.g., intersecting or bisecting GB) dependent resistive switching behavior is physically investigated. Finally, this model is implemented to simulate the synaptic activity such as short-term/long-term plasticity, which indicates the possibility of using 2D-FETs for neuromorphic computing applications.
UR - http://www.scopus.com/inward/record.url?scp=85061801892&partnerID=8YFLogxK
U2 - 10.1109/IEDM.2018.8614655
DO - 10.1109/IEDM.2018.8614655
M3 - Conference contribution
AN - SCOPUS:85061801892
T3 - Technical Digest - International Electron Devices Meeting, IEDM
SP - 24.5.1-24.5.4
BT - 2018 IEEE International Electron Devices Meeting, IEDM 2018
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 64th Annual IEEE International Electron Devices Meeting, IEDM 2018
Y2 - 1 December 2018 through 5 December 2018
ER -