A Study on the Impact of Gamma Rays Irradiation on 4H-SiC CMOSFETs

Quan Han Chen*, Bing Yue Tsui, Der Sheng Chao

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

In this paper, the effect of applying voltge during irradiation is discussed. Gamma ray results in a significant amount of positive charges residue in the oxide of MOS structure devices. PMOSFET has higher Δ Vth than NMOSFET because of interface state charges type. The difference can also be observed on the VTC of CMOS inverters.

Original languageEnglish
Title of host publicationWiPDA Asia 2023 - IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9798350337112
DOIs
StatePublished - 2023
Event2023 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2023 - Hsinchu, Taiwan
Duration: 27 Aug 202329 Aug 2023

Publication series

NameWiPDA Asia 2023 - IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia

Conference

Conference2023 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2023
Country/TerritoryTaiwan
CityHsinchu
Period27/08/2329/08/23

Keywords

  • 4H-SiC
  • CMOS
  • Cobalt-60
  • gamma ray
  • inverter
  • oxide
  • TID
  • VTC

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