@inproceedings{5e10087f0c314ab6b883ee4a20042a2b,
title = "A Study on the Impact of Gamma Rays Irradiation on 4H-SiC CMOSFETs",
abstract = "In this paper, the effect of applying voltge during irradiation is discussed. Gamma ray results in a significant amount of positive charges residue in the oxide of MOS structure devices. PMOSFET has higher Δ Vth than NMOSFET because of interface state charges type. The difference can also be observed on the VTC of CMOS inverters.",
keywords = "4H-SiC, CMOS, Cobalt-60, gamma ray, inverter, oxide, TID, VTC",
author = "Chen, {Quan Han} and Tsui, {Bing Yue} and Chao, {Der Sheng}",
note = "Publisher Copyright: {\textcopyright} 2023 IEEE.; 2023 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2023 ; Conference date: 27-08-2023 Through 29-08-2023",
year = "2023",
doi = "10.1109/WiPDAAsia58218.2023.10261927",
language = "English",
series = "WiPDA Asia 2023 - IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "WiPDA Asia 2023 - IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia",
address = "United States",
}