A study on NiGe-contacted Ge n+/p Ge shallow junction prepared by dopant segregation technique

Bing-Yue Tsui*, Jhe Ju Shih, Han Chi Lin, Chiung-Yuan Lin

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

11 Scopus citations


In this work, the effect of dopant segregation on the NiGe/n-Ge contact is studied by experiments and first-principles calculations. Both Al-contacted and NiGe-contacted n+/p junctions were fabricated. Phosphorus and arsenic ions were Implanted Before Germanide (IBG) formation or Implanted After Germanide (IAG) formation. The NiGe-contacted junction always exhibit higher forward current than the Al-contacted junction due to dopant segregation. First principles calculations predict that phosphorus atoms tend to segregate on both NiGe side and Ge side while arsenic atoms tend to segregate at Ge side. Since phosphorus has higher activation level and lower diffusion coefficient than arsenic, we propose a phosphorus IBG + arsenic IAG process. Shallow n+/p junction with junction depth 90 nm below the NiGe/Ge interface is achieved. The lowest and average contact resistivity is 2 × 10-6 Ω cm2 and 6.7 × 10-6 Ω cm2, respectively. Methods which can further reduce the junction depth and contact resistivity are suggested.

Original languageEnglish
Article number6755
Pages (from-to)40-46
Number of pages7
JournalSolid-State Electronics
StatePublished - 1 May 2015


  • Contact resistance
  • Germanium
  • Nickel germanide
  • Shallow junction


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