A study on abrupt switching phenomena of independent double-gated poly-Si nanowire transistors under cryogenic operation

Zerming Lin; Wei Chen Chen; Horng-Chih Lin; Tiao Yuan Huang

doi:10.1109/VTSA.2011.5872222

A study on abrupt switching phenomena of independent double-gated poly-Si nanowire transistors under cryogenic operation

Zerming Lin^*, Wei Chen Chen, Horng-Chih Lin, Tiao Yuan Huang

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

In this work, to study short-channel effects (SCEs) of our previously proposed nwfet [1] and probe its transport characteristics, we have fabricated devices with sub-100-nm channel length (l) and performed characterization at various temperatures (t). We found, for the first time, that the non-uniform dopant distribution in the gate leads to additional carrier conduction barriers, manifesting themselves in abrupt turn-on characteristics for t below 200 k with subthreshold swing (ss) smaller than what drift-diffusion theory dictates.

Original language	English
Title of host publication	Proceedings of 2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011
Pages	38-39
Number of pages	2
DOIs	https://doi.org/10.1109/VTSA.2011.5872222
State	Published - 11 Jul 2011
Event	2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011 - Hsinchu, Taiwan Duration: 25 Apr 2011 → 27 Apr 2011

Publication series

Name	International Symposium on VLSI Technology, Systems, and Applications, Proceedings

Conference

Conference	2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011
Country/Territory	Taiwan
City	Hsinchu
Period	25/04/11 → 27/04/11

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10.1109/VTSA.2011.5872222

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Lin, Z., Chen, W. C., Lin, H.-C., & Huang, T. Y. (2011). A study on abrupt switching phenomena of independent double-gated poly-Si nanowire transistors under cryogenic operation. In Proceedings of 2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011 (pp. 38-39). Article 5872222 (International Symposium on VLSI Technology, Systems, and Applications, Proceedings). https://doi.org/10.1109/VTSA.2011.5872222

Lin, Zerming ; Chen, Wei Chen ; Lin, Horng-Chih et al. / A study on abrupt switching phenomena of independent double-gated poly-Si nanowire transistors under cryogenic operation. Proceedings of 2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011. 2011. pp. 38-39 (International Symposium on VLSI Technology, Systems, and Applications, Proceedings).

@inproceedings{c8d9c765f37f4f84b1ada3333eedbbac,

title = "A study on abrupt switching phenomena of independent double-gated poly-Si nanowire transistors under cryogenic operation",

abstract = "In this work, to study short-channel effects (SCEs) of our previously proposed nwfet [1] and probe its transport characteristics, we have fabricated devices with sub-100-nm channel length (l) and performed characterization at various temperatures (t). We found, for the first time, that the non-uniform dopant distribution in the gate leads to additional carrier conduction barriers, manifesting themselves in abrupt turn-on characteristics for t below 200 k with subthreshold swing (ss) smaller than what drift-diffusion theory dictates.",

author = "Zerming Lin and Chen, {Wei Chen} and Horng-Chih Lin and Huang, {Tiao Yuan}",

year = "2011",

month = jul,

day = "11",

doi = "10.1109/VTSA.2011.5872222",

language = "English",

isbn = "9781424484928",

series = "International Symposium on VLSI Technology, Systems, and Applications, Proceedings",

pages = "38--39",

booktitle = "Proceedings of 2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011",

note = "2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011 ; Conference date: 25-04-2011 Through 27-04-2011",

}

Lin, Z, Chen, WC, Lin, H-C & Huang, TY 2011, A study on abrupt switching phenomena of independent double-gated poly-Si nanowire transistors under cryogenic operation. in Proceedings of 2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011., 5872222, International Symposium on VLSI Technology, Systems, and Applications, Proceedings, pp. 38-39, 2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011, Hsinchu, Taiwan, 25/04/11. https://doi.org/10.1109/VTSA.2011.5872222

A study on abrupt switching phenomena of independent double-gated poly-Si nanowire transistors under cryogenic operation. / Lin, Zerming; Chen, Wei Chen; Lin, Horng-Chih et al.
Proceedings of 2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011. 2011. p. 38-39 5872222 (International Symposium on VLSI Technology, Systems, and Applications, Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Lin, Zerming

AU - Chen, Wei Chen

AU - Lin, Horng-Chih

AU - Huang, Tiao Yuan

PY - 2011/7/11

Y1 - 2011/7/11

N2 - In this work, to study short-channel effects (SCEs) of our previously proposed nwfet [1] and probe its transport characteristics, we have fabricated devices with sub-100-nm channel length (l) and performed characterization at various temperatures (t). We found, for the first time, that the non-uniform dopant distribution in the gate leads to additional carrier conduction barriers, manifesting themselves in abrupt turn-on characteristics for t below 200 k with subthreshold swing (ss) smaller than what drift-diffusion theory dictates.

AB - In this work, to study short-channel effects (SCEs) of our previously proposed nwfet [1] and probe its transport characteristics, we have fabricated devices with sub-100-nm channel length (l) and performed characterization at various temperatures (t). We found, for the first time, that the non-uniform dopant distribution in the gate leads to additional carrier conduction barriers, manifesting themselves in abrupt turn-on characteristics for t below 200 k with subthreshold swing (ss) smaller than what drift-diffusion theory dictates.

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U2 - 10.1109/VTSA.2011.5872222

DO - 10.1109/VTSA.2011.5872222

M3 - Conference contribution

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SN - 9781424484928

T3 - International Symposium on VLSI Technology, Systems, and Applications, Proceedings

SP - 38

EP - 39

BT - Proceedings of 2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011

T2 - 2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011

Y2 - 25 April 2011 through 27 April 2011

ER -

Lin Z, Chen WC, Lin HC, Huang TY. A study on abrupt switching phenomena of independent double-gated poly-Si nanowire transistors under cryogenic operation. In Proceedings of 2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011. 2011. p. 38-39. 5872222. (International Symposium on VLSI Technology, Systems, and Applications, Proceedings). doi: 10.1109/VTSA.2011.5872222

A study on abrupt switching phenomena of independent double-gated poly-Si nanowire transistors under cryogenic operation

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