A source-side injection erasable programmable read-only-memory (SI-EPROM) device

A. T. Wu, T. Y. Chan, P. K. Ko, Chen-Ming Hu

Research output: Contribution to journalArticlepeer-review

10 Scopus citations

Abstract

A new erasable programmable read-only memory (EPROM) device with promise for low-voltage high-speed programming is described. This device is an asymmetrical n-channel stacked-gate MOSFET, with a short weak gate-control channel region introduced close to the source, At high gate bias, a strong channel electric field is created in this local region even at a relatively low drain voltage. Furthermore, the gate oxide field in this region also aids the injection of hot electrons into the floating gate. As a result, the source-side injection EPROM (SI-EPROM) has shown 103s programming speed at a drain voltage of 5 V.

Original languageEnglish
Pages (from-to)540-542
Number of pages3
JournalIEEE Electron Device Letters
Volume7
Issue number9
DOIs
StatePublished - 1 Jan 1986

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