A source-side injection erasable programmable read-only-memory (SI-EPROM) device

A. T. Wu; T. Y. Chan; P. K. Ko; Chen-Ming Hu

doi:10.1109/EDL.1986.26465

A source-side injection erasable programmable read-only-memory (SI-EPROM) device

A. T. Wu, T. Y. Chan, P. K. Ko, Chen-Ming Hu

International College of Semiconductor Technology

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

A new erasable programmable read-only memory (EPROM) device with promise for low-voltage high-speed programming is described. This device is an asymmetrical n-channel stacked-gate MOSFET, with a short weak gate-control channel region introduced close to the source, At high gate bias, a strong channel electric field is created in this local region even at a relatively low drain voltage. Furthermore, the gate oxide field in this region also aids the injection of hot electrons into the floating gate. As a result, the source-side injection EPROM (SI-EPROM) has shown 103s programming speed at a drain voltage of 5 V.

Original language	English
Pages (from-to)	540-542
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	7
Issue number	9
DOIs	https://doi.org/10.1109/EDL.1986.26465
State	Published - 1 Jan 1986

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abstract = "A new erasable programmable read-only memory (EPROM) device with promise for low-voltage high-speed programming is described. This device is an asymmetrical n-channel stacked-gate MOSFET, with a short weak gate-control channel region introduced close to the source, At high gate bias, a strong channel electric field is created in this local region even at a relatively low drain voltage. Furthermore, the gate oxide field in this region also aids the injection of hot electrons into the floating gate. As a result, the source-side injection EPROM (SI-EPROM) has shown 103s programming speed at a drain voltage of 5 V.",

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AU - Wu, A. T.

AU - Chan, T. Y.

AU - Ko, P. K.

AU - Hu, Chen-Ming

PY - 1986/1/1

Y1 - 1986/1/1

N2 - A new erasable programmable read-only memory (EPROM) device with promise for low-voltage high-speed programming is described. This device is an asymmetrical n-channel stacked-gate MOSFET, with a short weak gate-control channel region introduced close to the source, At high gate bias, a strong channel electric field is created in this local region even at a relatively low drain voltage. Furthermore, the gate oxide field in this region also aids the injection of hot electrons into the floating gate. As a result, the source-side injection EPROM (SI-EPROM) has shown 103s programming speed at a drain voltage of 5 V.

AB - A new erasable programmable read-only memory (EPROM) device with promise for low-voltage high-speed programming is described. This device is an asymmetrical n-channel stacked-gate MOSFET, with a short weak gate-control channel region introduced close to the source, At high gate bias, a strong channel electric field is created in this local region even at a relatively low drain voltage. Furthermore, the gate oxide field in this region also aids the injection of hot electrons into the floating gate. As a result, the source-side injection EPROM (SI-EPROM) has shown 103s programming speed at a drain voltage of 5 V.

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JF - IEEE Electron Device Letters

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ER -

A source-side injection erasable programmable read-only-memory (SI-EPROM) device

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