A Single-Inductor Dual-Output Converter with the Stacked mosfet Driving Technique for Low Quiescent Current and Cross Regulation

Hsin Chen; Chao Jen Huang; Chun Chieh Kuo; Li Chi Lin; Yu Sheng Ma; Wen Hau Yang; Ke-Horng Chen; Ying Hsi Lin; Shian Ru Lin; Tsung Yen Tsai

doi:10.1109/TPEL.2018.2845124

A Single-Inductor Dual-Output Converter with the Stacked mosfet Driving Technique for Low Quiescent Current and Cross Regulation

Hsin Chen^*
, Chao Jen Huang
, Chun Chieh Kuo
, Li Chi Lin
, Yu Sheng Ma
, Wen Hau Yang
, Ke-Horng Chen
, Ying Hsi Lin
, Shian Ru Lin
, Tsung Yen Tsai

^*Corresponding author for this work

Department of Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

33 Scopus citations

Abstract

Stacked mosfet structures made of low-voltage devices suffer from degraded transient response or large footprint when a capacitorless or dominant-pole compensated low-dropout (LDO) regulator biases the driver. Due to the self-stabilizing nature, the proposed stacked mosfet driver (SMD) technology effectively drives the power stage and greatly reduces the noise at the switching nodes for low cross regulation (CR) in a single-inductor dual-output (SIDO) converter. In addition, two inherent LDO regulators in SMD technology fully regulate the dual outputs with the advantage of low quiescent current at no-load conditions. The experimental results show that the test chip fabricated under the 0.25-μm process has low CR of 0.015 mV/mA and ultralow quiescent current of 5 μA under no-load conditions.

Original language	English
Article number	8374966
Pages (from-to)	2758-2770
Number of pages	13
Journal	IEEE Transactions on Power Electronics
Volume	34
Issue number	3
DOIs	https://doi.org/10.1109/TPEL.2018.2845124
State	Published - Mar 2019

Keywords

Cross regulation (CR)
low-dropout (LDO) regulator
single-inductor dual-output (SIDO) converter
stacked mosfet structures

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10.1109/TPEL.2018.2845124

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Chen, H., Huang, C. J., Kuo, C. C., Lin, L. C., Ma, Y. S., Yang, W. H., Chen, K.-H., Lin, Y. H., Lin, S. R., & Tsai, T. Y. (2019). A Single-Inductor Dual-Output Converter with the Stacked mosfet Driving Technique for Low Quiescent Current and Cross Regulation. IEEE Transactions on Power Electronics, 34(3), 2758-2770. Article 8374966. https://doi.org/10.1109/TPEL.2018.2845124

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title = "A Single-Inductor Dual-Output Converter with the Stacked mosfet Driving Technique for Low Quiescent Current and Cross Regulation",

abstract = "Stacked mosfet structures made of low-voltage devices suffer from degraded transient response or large footprint when a capacitorless or dominant-pole compensated low-dropout (LDO) regulator biases the driver. Due to the self-stabilizing nature, the proposed stacked mosfet driver (SMD) technology effectively drives the power stage and greatly reduces the noise at the switching nodes for low cross regulation (CR) in a single-inductor dual-output (SIDO) converter. In addition, two inherent LDO regulators in SMD technology fully regulate the dual outputs with the advantage of low quiescent current at no-load conditions. The experimental results show that the test chip fabricated under the 0.25-μm process has low CR of 0.015 mV/mA and ultralow quiescent current of 5 μA under no-load conditions.",

keywords = "Cross regulation (CR), low-dropout (LDO) regulator, single-inductor dual-output (SIDO) converter, stacked mosfet structures",

author = "Hsin Chen and Huang, \{Chao Jen\} and Kuo, \{Chun Chieh\} and Lin, \{Li Chi\} and Ma, \{Yu Sheng\} and Yang, \{Wen Hau\} and Ke-Horng Chen and Lin, \{Ying Hsi\} and Lin, \{Shian Ru\} and Tsai, \{Tsung Yen\}",

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year = "2019",

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doi = "10.1109/TPEL.2018.2845124",

language = "English",

volume = "34",

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T1 - A Single-Inductor Dual-Output Converter with the Stacked mosfet Driving Technique for Low Quiescent Current and Cross Regulation

AU - Chen, Hsin

AU - Huang, Chao Jen

AU - Kuo, Chun Chieh

AU - Lin, Li Chi

AU - Ma, Yu Sheng

AU - Yang, Wen Hau

AU - Chen, Ke-Horng

AU - Lin, Ying Hsi

AU - Lin, Shian Ru

AU - Tsai, Tsung Yen

PY - 2019/3

Y1 - 2019/3

N2 - Stacked mosfet structures made of low-voltage devices suffer from degraded transient response or large footprint when a capacitorless or dominant-pole compensated low-dropout (LDO) regulator biases the driver. Due to the self-stabilizing nature, the proposed stacked mosfet driver (SMD) technology effectively drives the power stage and greatly reduces the noise at the switching nodes for low cross regulation (CR) in a single-inductor dual-output (SIDO) converter. In addition, two inherent LDO regulators in SMD technology fully regulate the dual outputs with the advantage of low quiescent current at no-load conditions. The experimental results show that the test chip fabricated under the 0.25-μm process has low CR of 0.015 mV/mA and ultralow quiescent current of 5 μA under no-load conditions.

AB - Stacked mosfet structures made of low-voltage devices suffer from degraded transient response or large footprint when a capacitorless or dominant-pole compensated low-dropout (LDO) regulator biases the driver. Due to the self-stabilizing nature, the proposed stacked mosfet driver (SMD) technology effectively drives the power stage and greatly reduces the noise at the switching nodes for low cross regulation (CR) in a single-inductor dual-output (SIDO) converter. In addition, two inherent LDO regulators in SMD technology fully regulate the dual outputs with the advantage of low quiescent current at no-load conditions. The experimental results show that the test chip fabricated under the 0.25-μm process has low CR of 0.015 mV/mA and ultralow quiescent current of 5 μA under no-load conditions.

KW - Cross regulation (CR)

KW - low-dropout (LDO) regulator

KW - single-inductor dual-output (SIDO) converter

KW - stacked mosfet structures

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A Single-Inductor Dual-Output Converter with the Stacked mosfet Driving Technique for Low Quiescent Current and Cross Regulation

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