A Simple Method to Characterize Substrate Current in MOSFET's

T. Y. Chan; P. K. Ko; Chen-Ming Hu

doi:10.1109/EDL.1984.26006

A Simple Method to Characterize Substrate Current in MOSFET's

T. Y. Chan, P. K. Ko, Chen-Ming Hu

International College of Semiconductor Technology

Research output: Contribution to journal › Article › peer-review

164 Scopus citations

Abstract

Experimental verification of substrate current characteristics is thoroughly carried out. V_DS — V_DSAT, instead of V_DS, is shown to be the driving force of all hot-electron effects. A simple relationship between substrate current and V_DS — V_DSAT is found. This relationship provides a convenient tool to characterize the substrate current or the channel electric field, and, hence, all hot-electron effects. Measurements of I_SUB/I_D and V_DS — V_DSAT at two bias points and any one channel length are sufficient to fully characterize the substrate currents for all channel lengths V_DS's and V_G's for a given technology.

Original language	English
Pages (from-to)	505-507
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	5
Issue number	12
DOIs	https://doi.org/10.1109/EDL.1984.26006
State	Published - 1 Jan 1984

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A Simple Method to Characterize Substrate Current in MOSFET's

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