A simple method for gettering of nickel within the NILC polycrystalline silicon film using a gettering substrate

Chih Yuan Hou; Chi Ching Lin; Yew-Chuhg Wu

doi:10.1149/1.2356355

A simple method for gettering of nickel within the NILC polycrystalline silicon film using a gettering substrate

Chih Yuan Hou^*, Chi Ching Lin, Yew-Chuhg Wu

^*Corresponding author for this work

Department of Materials Science and Engineering

Research output: Contribution to journal › Conference article › peer-review

Abstract

Ni-metal-induced lateral crystallization (NILC) of amorphous silicon (α-Si) has been employed to fabricate high-performance low-temperature polycrystalline silicon (poly-Si) thin-film transistors (TFTs). However, the current crystallization technology often leads to trapped Ni and NiSi ₂ precipitates, thus degrading the device performance. We proposed using α-Si-coated wafers as gettering substrates. By bonding the gettering substrate and NILC poly-Si film together, the Ni-metal impurity within the NILC poly-Si film was greatly reduced. Copyright The Electrochemical Society.

Original language	English
Pages (from-to)	203-206
Number of pages	4
Journal	ECS Transactions
Volume	3
Issue number	8
DOIs	https://doi.org/10.1149/1.2356355
State	Published - 1 Dec 2006
Event	Thin Film Transistor Technologies 8 - 210th Electrochemical Society Meeting - Cancun, Mexico Duration: 29 Oct 2006 → 3 Nov 2006

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title = "A simple method for gettering of nickel within the NILC polycrystalline silicon film using a gettering substrate",

abstract = "Ni-metal-induced lateral crystallization (NILC) of amorphous silicon (α-Si) has been employed to fabricate high-performance low-temperature polycrystalline silicon (poly-Si) thin-film transistors (TFTs). However, the current crystallization technology often leads to trapped Ni and NiSi 2 precipitates, thus degrading the device performance. We proposed using α-Si-coated wafers as gettering substrates. By bonding the gettering substrate and NILC poly-Si film together, the Ni-metal impurity within the NILC poly-Si film was greatly reduced. Copyright The Electrochemical Society.",

author = "Hou, {Chih Yuan} and Lin, {Chi Ching} and Yew-Chuhg Wu",

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AU - Hou, Chih Yuan

AU - Lin, Chi Ching

AU - Wu, Yew-Chuhg

PY - 2006/12/1

Y1 - 2006/12/1

N2 - Ni-metal-induced lateral crystallization (NILC) of amorphous silicon (α-Si) has been employed to fabricate high-performance low-temperature polycrystalline silicon (poly-Si) thin-film transistors (TFTs). However, the current crystallization technology often leads to trapped Ni and NiSi 2 precipitates, thus degrading the device performance. We proposed using α-Si-coated wafers as gettering substrates. By bonding the gettering substrate and NILC poly-Si film together, the Ni-metal impurity within the NILC poly-Si film was greatly reduced. Copyright The Electrochemical Society.

AB - Ni-metal-induced lateral crystallization (NILC) of amorphous silicon (α-Si) has been employed to fabricate high-performance low-temperature polycrystalline silicon (poly-Si) thin-film transistors (TFTs). However, the current crystallization technology often leads to trapped Ni and NiSi 2 precipitates, thus degrading the device performance. We proposed using α-Si-coated wafers as gettering substrates. By bonding the gettering substrate and NILC poly-Si film together, the Ni-metal impurity within the NILC poly-Si film was greatly reduced. Copyright The Electrochemical Society.

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JF - ECS Transactions

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Y2 - 29 October 2006 through 3 November 2006

ER -

A simple method for gettering of nickel within the NILC polycrystalline silicon film using a gettering substrate

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