A simple growth method to produce a-plane GaN thick films by hydride vapor phase epitaxy

Yin Hao Wu; Chuo Han Lee; Chung Ming Chu; Yen Hsien Yeh; Chan Lin Chen; Wei-I Lee

doi:10.7567/JJAP.52.08JB08

A simple growth method to produce a-plane GaN thick films by hydride vapor phase epitaxy

Yin Hao Wu, Chuo Han Lee, Chung Ming Chu, Yen Hsien Yeh, Chan Lin Chen, Wei-I Lee

Department of Electrophysics

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

A-plane GaN was grown on r -plane sapphire using a two-step growth method by hydride vapor phase epitaxy (HVPE). In the first step, a-plane GaN formed triangular stripes along the m-direction ([ 1100] direction) at a low growth temperature. Then, increasing the growth temperature enhanced the lateral growth mode to coalesce a-plane GaN in the second step. There were triangular voids formed after growth. In this work, a new method was developed to produce the voids in the a-plane GaN film using the two-step growth method without optical lithography.

Original language	English
Article number	08JB08
Journal	Japanese Journal of Applied Physics
Volume	52
Issue number	8 PART 2
DOIs	https://doi.org/10.7567/JJAP.52.08JB08
State	Published - 1 Aug 2013

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abstract = "A-plane GaN was grown on r -plane sapphire using a two-step growth method by hydride vapor phase epitaxy (HVPE). In the first step, a-plane GaN formed triangular stripes along the m-direction ([ 1100] direction) at a low growth temperature. Then, increasing the growth temperature enhanced the lateral growth mode to coalesce a-plane GaN in the second step. There were triangular voids formed after growth. In this work, a new method was developed to produce the voids in the a-plane GaN film using the two-step growth method without optical lithography.",

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AU - Wu, Yin Hao

AU - Lee, Chuo Han

AU - Chu, Chung Ming

AU - Yeh, Yen Hsien

AU - Chen, Chan Lin

AU - Lee, Wei-I

PY - 2013/8/1

Y1 - 2013/8/1

N2 - A-plane GaN was grown on r -plane sapphire using a two-step growth method by hydride vapor phase epitaxy (HVPE). In the first step, a-plane GaN formed triangular stripes along the m-direction ([ 1100] direction) at a low growth temperature. Then, increasing the growth temperature enhanced the lateral growth mode to coalesce a-plane GaN in the second step. There were triangular voids formed after growth. In this work, a new method was developed to produce the voids in the a-plane GaN film using the two-step growth method without optical lithography.

AB - A-plane GaN was grown on r -plane sapphire using a two-step growth method by hydride vapor phase epitaxy (HVPE). In the first step, a-plane GaN formed triangular stripes along the m-direction ([ 1100] direction) at a low growth temperature. Then, increasing the growth temperature enhanced the lateral growth mode to coalesce a-plane GaN in the second step. There were triangular voids formed after growth. In this work, a new method was developed to produce the voids in the a-plane GaN film using the two-step growth method without optical lithography.

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JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

IS - 8 PART 2

M1 - 08JB08

ER -

A simple growth method to produce a-plane GaN thick films by hydride vapor phase epitaxy

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