A simple and low-/cost method to fabricate TFTs with poly-Si nanowire channel

Horng-Chih Lin; M. H. Lee; C. J. Su; T. Y. Huang; C. C. Lee; Yuh-Shyong Yang

doi:10.1109/LED.2005.853669

A simple and low-/cost method to fabricate TFTs with poly-Si nanowire channel

Horng-Chih Lin^*, M. H. Lee, C. J. Su, T. Y. Huang, C. C. Lee, Yuh-Shyong Yang

^*Corresponding author for this work

Department of Biological Science and Technology

Research output: Contribution to journal › Article › peer-review

67 Scopus citations

Abstract

A very simple and low-cost scheme is proposed for fabricating min-film transistors with poly-Si nanowire (NW) channels. In this scheme, the poly-Si NW channel is formed by cleverly employing the poly-Si sidewall spacer technique. In addition, the poly-Si NW channel is genuinely exposed to the environment after the poly-Si sidewall spacer formation in the new scheme. This unique feature, together with its simplicity and low-cost, makes this approach very suitable for applications and manufacturing of bio-logic sensing devices. Good device performance is demonstrated in this letter.

Original language	English
Pages (from-to)	643-645
Number of pages	3
Journal	Ieee Electron Device Letters
Volume	26
Issue number	9
DOIs	https://doi.org/10.1109/LED.2005.853669
State	Published - Sep 2005

Keywords

Nanowires
Poly-Si
Sensor device
Thin-film transistors (TFTs)

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10.1109/LED.2005.853669

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title = "A simple and low-/cost method to fabricate TFTs with poly-Si nanowire channel",

abstract = "A very simple and low-cost scheme is proposed for fabricating min-film transistors with poly-Si nanowire (NW) channels. In this scheme, the poly-Si NW channel is formed by cleverly employing the poly-Si sidewall spacer technique. In addition, the poly-Si NW channel is genuinely exposed to the environment after the poly-Si sidewall spacer formation in the new scheme. This unique feature, together with its simplicity and low-cost, makes this approach very suitable for applications and manufacturing of bio-logic sensing devices. Good device performance is demonstrated in this letter.",

keywords = "Nanowires, Poly-Si, Sensor device, Thin-film transistors (TFTs)",

author = "Horng-Chih Lin and Lee, {M. H.} and Su, {C. J.} and Huang, {T. Y.} and Lee, {C. C.} and Yuh-Shyong Yang",

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AU - Lee, M. H.

AU - Su, C. J.

AU - Huang, T. Y.

AU - Lee, C. C.

AU - Yang, Yuh-Shyong

PY - 2005/9

Y1 - 2005/9

N2 - A very simple and low-cost scheme is proposed for fabricating min-film transistors with poly-Si nanowire (NW) channels. In this scheme, the poly-Si NW channel is formed by cleverly employing the poly-Si sidewall spacer technique. In addition, the poly-Si NW channel is genuinely exposed to the environment after the poly-Si sidewall spacer formation in the new scheme. This unique feature, together with its simplicity and low-cost, makes this approach very suitable for applications and manufacturing of bio-logic sensing devices. Good device performance is demonstrated in this letter.

AB - A very simple and low-cost scheme is proposed for fabricating min-film transistors with poly-Si nanowire (NW) channels. In this scheme, the poly-Si NW channel is formed by cleverly employing the poly-Si sidewall spacer technique. In addition, the poly-Si NW channel is genuinely exposed to the environment after the poly-Si sidewall spacer formation in the new scheme. This unique feature, together with its simplicity and low-cost, makes this approach very suitable for applications and manufacturing of bio-logic sensing devices. Good device performance is demonstrated in this letter.

KW - Nanowires

KW - Poly-Si

KW - Sensor device

KW - Thin-film transistors (TFTs)

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JO - Ieee Electron Device Letters

JF - Ieee Electron Device Letters

IS - 9

ER -

A simple and low-/cost method to fabricate TFTs with poly-Si nanowire channel

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Keywords

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