## Abstract

For the first time, a simple analytical model in the form of explicit formulas was derived for on-silicon-chip inductors. This analytical model can accurately calculate self-resonance frequencies (f_{SR}) in TEM mode and eddy current mode corresponding to very high and very low substrate resistivities (ρ_{Si}). Furthermore, this derived model can predict and explain the interesting result that f_{SR} keeps nearly a constant independent of ρ_{Si} in TEM and eddy current modes but is critically determined by the inductance and parasitic capacitances. The simple model is useful in on-silicon-chip inductor design for increasing f_{SR} under specified inductance target for broadband RF circuit design and applications.

Original language | English |
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Pages (from-to) | 1225-1231 |

Number of pages | 7 |

Journal | Solid-State Electronics |

Volume | 52 |

Issue number | 8 |

DOIs | |

State | Published - 1 Aug 2008 |

## Keywords

- Eddy current mode
- Inductor
- Self-resonance frequency
- Substrate resistivity
- TEM mode