A silicon-based closed-loop 256-pixel near-field capacitive sensing array with 3-ppm sensitivity and selectable frequency shift gain

Jia Zhou; Chia Jen Liang; Christopher Chen; Jieqiong Du; Rulin Huang; Richard Al Hadi; James C.M. Hwang; Mau Chung Frank Chang

doi:10.1109/IMS30576.2020.9224059

A silicon-based closed-loop 256-pixel near-field capacitive sensing array with 3-ppm sensitivity and selectable frequency shift gain

Jia Zhou^*, Chia Jen Liang, Christopher Chen, Jieqiong Du, Rulin Huang, Richard Al Hadi, James C.M. Hwang, Mau Chung Frank Chang

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

2 Scopus citations

Abstract

This paper presents a two-dimensional capacitive sensor circuit implemented in 28-nm silicon technology for material characterization. The circuit is based on a 4.5-GHz quadrature oscillator with a single inductor and distributed capacitor array with 12.6-um pitch. The 16×16 sensor array is designed with minimal signal energy loss to enable scalable designs. The quadrature oscillator is embedded in a trans-linear loop for frequency shift amplification up to 36 times with an acquisition bandwidth of 2.4 MHz. The readout time for single pixel drops below the limit set by the quantization noise floor and reaches near optimal window, while the sensor maintains a sensitivity of 3 ppm. A mixer is used to down-convert the high-frequency component to an intermediate frequency. A digital core is used to acquire and process the data.

Original language	English
Title of host publication	IMS 2020 - 2020 IEEE/MTT-S International Microwave Symposium
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	464-467
Number of pages	4
ISBN (Electronic)	9781728168159
DOIs	https://doi.org/10.1109/IMS30576.2020.9224059
State	Published - Aug 2020
Event	2020 IEEE/MTT-S International Microwave Symposium, IMS 2020 - Virtual, Los Angeles, United States Duration: 4 Aug 2020 → 6 Aug 2020

Publication series

Name	IEEE MTT-S International Microwave Symposium Digest
Volume	2020-August
ISSN (Print)	0149-645X

Conference

Conference	2020 IEEE/MTT-S International Microwave Symposium, IMS 2020
Country/Territory	United States
City	Virtual, Los Angeles
Period	4/08/20 → 6/08/20

Keywords

Capacitive sensor
Imaging array
Near-field detector
Silicon

Access to Document

10.1109/IMS30576.2020.9224059

Cite this

Zhou, J., Liang, C. J., Chen, C., Du, J., Huang, R., Al Hadi, R., Hwang, J. C. M., & Chang, M. C. F. (2020). A silicon-based closed-loop 256-pixel near-field capacitive sensing array with 3-ppm sensitivity and selectable frequency shift gain. In IMS 2020 - 2020 IEEE/MTT-S International Microwave Symposium (pp. 464-467). Article 9224059 (IEEE MTT-S International Microwave Symposium Digest; Vol. 2020-August). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IMS30576.2020.9224059

Zhou, Jia ; Liang, Chia Jen ; Chen, Christopher et al. / A silicon-based closed-loop 256-pixel near-field capacitive sensing array with 3-ppm sensitivity and selectable frequency shift gain. IMS 2020 - 2020 IEEE/MTT-S International Microwave Symposium. Institute of Electrical and Electronics Engineers Inc., 2020. pp. 464-467 (IEEE MTT-S International Microwave Symposium Digest).

@inproceedings{6f776a94b92747b0a2487464ff19efa1,

title = "A silicon-based closed-loop 256-pixel near-field capacitive sensing array with 3-ppm sensitivity and selectable frequency shift gain",

abstract = "This paper presents a two-dimensional capacitive sensor circuit implemented in 28-nm silicon technology for material characterization. The circuit is based on a 4.5-GHz quadrature oscillator with a single inductor and distributed capacitor array with 12.6-um pitch. The 16×16 sensor array is designed with minimal signal energy loss to enable scalable designs. The quadrature oscillator is embedded in a trans-linear loop for frequency shift amplification up to 36 times with an acquisition bandwidth of 2.4 MHz. The readout time for single pixel drops below the limit set by the quantization noise floor and reaches near optimal window, while the sensor maintains a sensitivity of 3 ppm. A mixer is used to down-convert the high-frequency component to an intermediate frequency. A digital core is used to acquire and process the data.",

keywords = "Capacitive sensor, Imaging array, Near-field detector, Silicon",

author = "Jia Zhou and Liang, {Chia Jen} and Christopher Chen and Jieqiong Du and Rulin Huang and {Al Hadi}, Richard and Hwang, {James C.M.} and Chang, {Mau Chung Frank}",

note = "Publisher Copyright: {\textcopyright} 2020 IEEE. Copyright: Copyright 2020 Elsevier B.V., All rights reserved.; 2020 IEEE/MTT-S International Microwave Symposium, IMS 2020 ; Conference date: 04-08-2020 Through 06-08-2020",

year = "2020",

month = aug,

doi = "10.1109/IMS30576.2020.9224059",

language = "English",

series = "IEEE MTT-S International Microwave Symposium Digest",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "464--467",

booktitle = "IMS 2020 - 2020 IEEE/MTT-S International Microwave Symposium",

address = "美國",

}

Zhou, J, Liang, CJ, Chen, C, Du, J, Huang, R, Al Hadi, R, Hwang, JCM & Chang, MCF 2020, A silicon-based closed-loop 256-pixel near-field capacitive sensing array with 3-ppm sensitivity and selectable frequency shift gain. in IMS 2020 - 2020 IEEE/MTT-S International Microwave Symposium., 9224059, IEEE MTT-S International Microwave Symposium Digest, vol. 2020-August, Institute of Electrical and Electronics Engineers Inc., pp. 464-467, 2020 IEEE/MTT-S International Microwave Symposium, IMS 2020, Virtual, Los Angeles, United States, 4/08/20. https://doi.org/10.1109/IMS30576.2020.9224059

A silicon-based closed-loop 256-pixel near-field capacitive sensing array with 3-ppm sensitivity and selectable frequency shift gain. / Zhou, Jia; Liang, Chia Jen; Chen, Christopher et al.
IMS 2020 - 2020 IEEE/MTT-S International Microwave Symposium. Institute of Electrical and Electronics Engineers Inc., 2020. p. 464-467 9224059 (IEEE MTT-S International Microwave Symposium Digest; Vol. 2020-August).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - A silicon-based closed-loop 256-pixel near-field capacitive sensing array with 3-ppm sensitivity and selectable frequency shift gain

AU - Zhou, Jia

AU - Liang, Chia Jen

AU - Chen, Christopher

AU - Du, Jieqiong

AU - Huang, Rulin

AU - Al Hadi, Richard

AU - Hwang, James C.M.

AU - Chang, Mau Chung Frank

PY - 2020/8

Y1 - 2020/8

N2 - This paper presents a two-dimensional capacitive sensor circuit implemented in 28-nm silicon technology for material characterization. The circuit is based on a 4.5-GHz quadrature oscillator with a single inductor and distributed capacitor array with 12.6-um pitch. The 16×16 sensor array is designed with minimal signal energy loss to enable scalable designs. The quadrature oscillator is embedded in a trans-linear loop for frequency shift amplification up to 36 times with an acquisition bandwidth of 2.4 MHz. The readout time for single pixel drops below the limit set by the quantization noise floor and reaches near optimal window, while the sensor maintains a sensitivity of 3 ppm. A mixer is used to down-convert the high-frequency component to an intermediate frequency. A digital core is used to acquire and process the data.

AB - This paper presents a two-dimensional capacitive sensor circuit implemented in 28-nm silicon technology for material characterization. The circuit is based on a 4.5-GHz quadrature oscillator with a single inductor and distributed capacitor array with 12.6-um pitch. The 16×16 sensor array is designed with minimal signal energy loss to enable scalable designs. The quadrature oscillator is embedded in a trans-linear loop for frequency shift amplification up to 36 times with an acquisition bandwidth of 2.4 MHz. The readout time for single pixel drops below the limit set by the quantization noise floor and reaches near optimal window, while the sensor maintains a sensitivity of 3 ppm. A mixer is used to down-convert the high-frequency component to an intermediate frequency. A digital core is used to acquire and process the data.

KW - Capacitive sensor

KW - Imaging array

KW - Near-field detector

KW - Silicon

UR - http://www.scopus.com/inward/record.url?scp=85094203133&partnerID=8YFLogxK

U2 - 10.1109/IMS30576.2020.9224059

DO - 10.1109/IMS30576.2020.9224059

M3 - Conference contribution

AN - SCOPUS:85094203133

T3 - IEEE MTT-S International Microwave Symposium Digest

SP - 464

EP - 467

BT - IMS 2020 - 2020 IEEE/MTT-S International Microwave Symposium

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2020 IEEE/MTT-S International Microwave Symposium, IMS 2020

Y2 - 4 August 2020 through 6 August 2020

ER -

Zhou J, Liang CJ, Chen C, Du J, Huang R, Al Hadi R et al. A silicon-based closed-loop 256-pixel near-field capacitive sensing array with 3-ppm sensitivity and selectable frequency shift gain. In IMS 2020 - 2020 IEEE/MTT-S International Microwave Symposium. Institute of Electrical and Electronics Engineers Inc. 2020. p. 464-467. 9224059. (IEEE MTT-S International Microwave Symposium Digest). doi: 10.1109/IMS30576.2020.9224059

A silicon-based closed-loop 256-pixel near-field capacitive sensing array with 3-ppm sensitivity and selectable frequency shift gain

Abstract

Publication series

Conference

Keywords

Access to Document

Other files and links

Fingerprint

Cite this