A Self-Consistent Approach Based on Bayesian Deconvolution for Trapping Time Constant Analysis: A Demonstration to Analyze ΔVTHTransients in p-GaN Gate Power HEMTs

Shivendra Kumar Singh, Tian Li Wu*, Yogesh Singh Chauhan

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

Characterizing the trapping time constant is crucial to understanding the root cause of the instability. The conventional approach to analyzing the trap-related transient characteristics mostly utilizes the derivative method to extrapolate the trapping time constant, which may have information loss due to an unobvious trapping response. This article presents a novel Bayesian deconvolution methodology to accurately extract and capture time constants. The proposed technique is applied to determine trapping time constants and activation energies in p-GaN gate power high electron mobility transistors (HEMTs) under positive gate bias stress. The proposed method is versatile and suitable for a broad spectrum of electronic devices experiencing the trapping-related transient phenomena.

Original languageEnglish
Pages (from-to)1820-1826
Number of pages7
JournalIEEE Transactions on Electron Devices
Volume71
Issue number3
DOIs
StatePublished - 1 Mar 2024

Keywords

  • Bayesian deconvolution
  • p-GaN gate HEMTs
  • threshold voltage shift
  • time-constant extraction

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