A robust bendable IrO_x thin film via mild alkaline solution process for neuron stimulating electrodes

We demonstrate a unique chemical formula to deposit hydrous iridium oxide thin film on a platinum-coated polyimide substrate. In a mild alkaline solution, the iridium (III) precursor undergoes the ligand exchange and hydrolysis reaction to become the iridium (III) dimers that are physically adsorbed on the substrate for subsequent heterogeneous condensation and growth of amorphous hydrous iridium oxide thin film. Both UV–Vis and X-ray absorption spectroscopy (XAS) are employed to determine the reaction steps involved. The chemical nature and crystallinity of the hydrous iridium oxide thin film are investigated by XAS, X-ray photon spectroscopy, and X-ray diffraction. The hydrous iridium oxide thin film reveals an impressive normalized charge storage capacity (CSC) of 0.3 mC/cm²-nm and a low impedance (80.5 Ω) at 1k Hz. In addition, in bending test of 3,000 cycles, the hydrous iridium oxide thin film retains 91.2 % of its initial normalized CSC without any physical crack and delamination. The cell viability test suggests negligible bio-toxicity. Our results provide a solid evidence of fabricating a robust flexible electrode for neural interfaces for potential use in implantable electronic devices.