A Review on Hybrid Bonding Interconnection and Its Characterization

Chien Kang Hsiung*, Kuan Neng Chen

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

4 Scopus citations

Abstract

With considering the performance computing growing exponentially, heterogeneous integration becomes as a solution for combining more logic, memory, and specialty chiplets in each area to accelerate computing. Hybrid bonding interconnection (HBI) is one of the most important technologies to heterogeneous integration, which is defined as a bonding along with a 'hybrid'interface (metal-metal and dielectric-dielectric). It enables a connection from a silicon chip to another with direct metal pad to pad connection. The technology increases the density of the contact and shorten the interconnect distance between components. In this paper, we review the modern technologies of Hybrid bonding interconnection with characterization of the contact interfaces of metal to metal and dielectric to dielectric. Also, we raise a novel method to perform a low cost, organic dielectric based, low process temperature hybrid bonding interconnection for wider packaging application needs.

Original languageEnglish
Pages (from-to)41-50
Number of pages10
JournalIEEE Nanotechnology Magazine
Volume18
Issue number2
DOIs
StatePublished - 1 Apr 2024

Keywords

  • heterogeneous integration
  • Hybrid bonding interconnection

Fingerprint

Dive into the research topics of 'A Review on Hybrid Bonding Interconnection and Its Characterization'. Together they form a unique fingerprint.

Cite this