A ReRAM-Based 4T2R Nonvolatile TCAM Using RC-Filtered Stress-Decoupled Scheme for Frequent-OFF Instant-ON Search Engines Used in IoT and Big-Data Processing

Meng Fan Chang, Lie Yue Huang, Wen Zhang Lin, Yen Ning Chiang, Chia Chen Kuo, Ching Hao Chuang, Keng Hao Yang, Hsiang Jen Tsai, Tien-Fu Chen, Shyh Shyuan Sheu

Research output: Contribution to journalArticlepeer-review

30 Scopus citations

Abstract

This paper outlines the RC-filtered stress-decoupled (RCSD) 4T2R nonvolatile TCAM (nvTCAM) with the following benefits: 1) reduced NVM-stress; 2) reduced ML parasitic load; and 3) suppression of match-line (ML) leakage current from match cells. The RCSD-4T2R cell achieves a 6× reduction in NVM-stress, a 2× increase in maximum wordlength, and a 2× reduction in search delay. In this paper, we also outline two search schemes, referred to as dynamic source-line pulse controlled (DSL-PC) search and dataline-pulse controlled (DL-PC) search, which were developed specifically for the RCSD-4T2R nvTCAM. We fabricated a 128 × 32 b RCSD-4T2R nvTCAM macro with HfO ReRAM using a 180 nm CMOS process. Using the DSL-PC and DL-PC schemes, the measured search delay of the RCSD-4T2R nvTCAM macro was 1.2 ns under typical VDD.

Original languageEnglish
Pages (from-to)2786-2789
Number of pages4
JournalIEEE Journal of Solid-State Circuits
Volume51
Issue number11
DOIs
StatePublished - Nov 2016

Keywords

  • Filter
  • ReRAM
  • TCAM
  • nonvolatile
  • nonvolatile TCAM
  • search engine

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