TY - GEN
T1 - A reliable Schottky barrier height extraction procedure
AU - Tsui, Bing-Yue
AU - Fu, Tze Yu
N1 - Publisher Copyright:
© 2016 IEEE.
PY - 2016/5/20
Y1 - 2016/5/20
N2 - This work proposes a Schottky barrier extraction procedure which considers the thermionic field emission (TFE) model, image-force induced barrier lowering effect, and parasitic resistance. The accuracy of the Schottky barrier height extracted by the field emission (FE) model at forward bias and the TFE model at reverse bias is evaluated. The TFE model can obtain accurate SBH with low SBH (∼0.3 eV) and high doping concentration (∼1×l020 cm-3). It is thus recommended that the proposed extraction procedure could be used to study the Schottky junction precisely.
AB - This work proposes a Schottky barrier extraction procedure which considers the thermionic field emission (TFE) model, image-force induced barrier lowering effect, and parasitic resistance. The accuracy of the Schottky barrier height extracted by the field emission (FE) model at forward bias and the TFE model at reverse bias is evaluated. The TFE model can obtain accurate SBH with low SBH (∼0.3 eV) and high doping concentration (∼1×l020 cm-3). It is thus recommended that the proposed extraction procedure could be used to study the Schottky junction precisely.
KW - Schottky barrier height
KW - field emission
KW - image-force barrier lowering
KW - thermionic emission
KW - thermionic field emission
UR - http://www.scopus.com/inward/record.url?scp=84974527568&partnerID=8YFLogxK
U2 - 10.1109/ICMTS.2016.7476206
DO - 10.1109/ICMTS.2016.7476206
M3 - Conference contribution
AN - SCOPUS:84974527568
T3 - IEEE International Conference on Microelectronic Test Structures
SP - 196
EP - 199
BT - 2016 29th IEEE International Conference on Microelectronic Test Structures, ICMTS 2016 - Conference Proceedings
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 29th IEEE International Conference on Microelectronic Test Structures, ICMTS 2016
Y2 - 28 March 2016 through 31 March 2016
ER -