A reliable Schottky barrier height extraction procedure

Bing-Yue Tsui, Tze Yu Fu

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    Abstract

    This work proposes a Schottky barrier extraction procedure which considers the thermionic field emission (TFE) model, image-force induced barrier lowering effect, and parasitic resistance. The accuracy of the Schottky barrier height extracted by the field emission (FE) model at forward bias and the TFE model at reverse bias is evaluated. The TFE model can obtain accurate SBH with low SBH (∼0.3 eV) and high doping concentration (∼1×l020 cm-3). It is thus recommended that the proposed extraction procedure could be used to study the Schottky junction precisely.

    Original languageEnglish
    Title of host publication2016 29th IEEE International Conference on Microelectronic Test Structures, ICMTS 2016 - Conference Proceedings
    PublisherInstitute of Electrical and Electronics Engineers Inc.
    Pages196-199
    Number of pages4
    ISBN (Electronic)9781467387934
    DOIs
    StatePublished - 20 May 2016
    Event29th IEEE International Conference on Microelectronic Test Structures, ICMTS 2016 - Yokohama, Japan
    Duration: 28 Mar 201631 Mar 2016

    Publication series

    NameIEEE International Conference on Microelectronic Test Structures
    Volume2016-May

    Conference

    Conference29th IEEE International Conference on Microelectronic Test Structures, ICMTS 2016
    Country/TerritoryJapan
    CityYokohama
    Period28/03/1631/03/16

    Keywords

    • Schottky barrier height
    • field emission
    • image-force barrier lowering
    • thermionic emission
    • thermionic field emission

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