@inproceedings{7170ebb21ed5437cab2a00a5508454a7,
title = "A Pulsed RTN Transient Measurement Technique: Demonstration on the Understanding of the Switching in Resistance Memory",
abstract = "The oxygen vacancy and mobile ions play major role on the resistance switching in a typical RRAM by the modulation of filament conduction. It is also known that soft-breakdown played a major role on the switching mechanism. However, the understanding of the mechanism involved in the soft-breakdown is not clear enough. In this paper, we demonstrated a pulsed RTN transient measurement technique which enables the determination of trap generation and its evolution with time. On the demonstrated sample with a HfON/Al2O3 MIM structure, different operations will generate different traps which can be revealed from the trap profiling. The soft-breakdown path can then be delineated for forming, SET/RESET processes. The results show that the path behaves like a cone, widening at the bottom electrode and narrowing on the top, with a neck and waist near 2 electrodes, which can properly describe the RRAM operations.",
keywords = "Oxygen-vacancy-based RAM, RTN, RTN transient measurement, Resistance memory, Soft-breakdown",
author = "Hsieh, {E. R.} and Cheng, {H. W.} and Huang, {Z. H.} and Chuang, {C. H.} and Yang, {S. P.} and Chung, {Steve S.}",
note = "Publisher Copyright: {\textcopyright} 2020 IEEE.; 2020 IEEE International Reliability Physics Symposium, IRPS 2020 ; Conference date: 28-04-2020 Through 30-05-2020",
year = "2020",
month = apr,
doi = "10.1109/IRPS45951.2020.9128893",
language = "English",
series = "IEEE International Reliability Physics Symposium Proceedings",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2020 IEEE International Reliability Physics Symposium, IRPS 2020 - Proceedings",
address = "美國",
}