A programmable high-voltage compliance neural stimulator for deep brain stimulation in vivo

Cihun Siyong Alex Gong, Hsin Yi Lai*, Sy Han Huang, Yu Chun Lo, Nicole Lee, Pin Yuan Chen, Po Hsun Tu, Chia Yen Yang, James Chang Chieh Lin, You Yin Chen

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

10 Scopus citations

Abstract

Deep brain stimulation (DBS) is one of the most effective therapies for movement and other disorders. The DBS neurosurgical procedure involves the implantation of a DBS device and a battery-operated neurotransmitter, which delivers electrical impulses to treatment targets through implanted electrodes. The DBS modulates the neuronal activities in the brain nucleus for improving physiological responses as long as an electric discharge above the stimulation threshold can be achieved. In an effort to improve the performance of an implanted DBS device, the device size, implementation cost, and power efficiency are among the most important DBS device design aspects. This study aims to present preliminary research results of an efficient stimulator, with emphasis on conversion efficiency. The prototype stimulator features high-voltage compliance, implemented with only a standard semiconductor process, without the use of extra masks in the foundry through our proposed circuit structure. The results of animal experiments, including evaluation of evoked responses induced by thalamic electrical stimuli with our fabricated chip, were shown to demonstrate the proof of concept of our design.

Original languageEnglish
Pages (from-to)12700-12719
Number of pages20
JournalSensors (Switzerland)
Volume15
Issue number6
DOIs
StatePublished - 28 May 2015

Keywords

  • Complementary metal-oxide-semiconductor (CMOS)
  • Deep brain stimulation (DBS)
  • High-voltage compliance neural stimulator

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