Abstract
For automobile applications, a high-speed switching 48-to-5 V dc-dc buck converter is implemented in the 0.5- \mu \text{m} CMOS and 0.5- \mu \text{m} gallium nitride (GaN)-on-Si processes. This proposed converter includes a pre-charge tracking technique, a temperature-dependent controlled gate driver, and an adaptive relaxation gate drive control technique. The measurement results of this article show that the efficiency can be increased by about 10.3% and can ensure the driving current capacity of enhance GaN (E-GaN). The built-in local negative feedback loop improves the reliability and reduces R_{\mathrm{\scriptscriptstyle ON}} by 21% to reach the peak efficiency as high as 95.4%.
Original language | English |
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Pages (from-to) | 2045-2053 |
Number of pages | 9 |
Journal | IEEE Journal of Solid-State Circuits |
Volume | 57 |
Issue number | 7 |
DOIs | |
State | Published - 1 Jul 2022 |
Keywords
- Enhance GaN
- gallium nitride
- power density
- reliability
- temperature-dependent controlled gate driver