Abstract
For automobile applications, a high-speed switching 48-to-5 V dc-dc buck converter is implemented in the 0.5-μm CMOS and 0.5-μm gallium nitride (GaN)-on-Si processes. This proposed converter includes a pre-charge tracking technique, a temperature-dependent controlled gate driver, and an adaptive relaxation gate drive control technique. The measurement results of this article show that the efficiency can be increased by about 10.3% and can ensure the driving current capacity of enhance GaN (E-GaN). The built-in local negative feedback loop improves the reliability and reduces <formula> <tex>$R_{ON}$</tex> </formula> by 21% to reach the peak efficiency as high as 95.4%.
Original language | English |
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Journal | IEEE Journal of Solid-State Circuits |
DOIs | |
State | Accepted/In press - 2022 |
Keywords
- Detectors
- Electromagnetic interference
- Enhance GaN
- Gallium nitride
- gallium nitride
- Gate drivers
- Logic gates
- power density
- reliability
- Switches
- Switching circuits
- temperature-dependent controlled gate driver.