Abstract
We present a new parallel semiconductor device simulation using the dynamic load balancing approach. This semiconductor device simulation based on the adaptive finite volume method with a posteriori error estimation has been developed and successfully implemented on a 16-PC Linux cluster with a message passing interface library. A constructive monotone iterative technique is also applied for solution of the system of nonlinear algebraic equations. Two different parallel versions of the algorithm to perform a complete device simulation are proposed. The first is a dynamic parallel domain decomposition approach, and the second is a parallel current-voltage characteristics points simulation. This implementation shows that a well-designed load balancing simulation can significantly reduce the execution time up to an order of magnitude. Compared with the measured data, numerical results on various submicron VLSI devices are presented, to show the accuracy and efficiency of the method.
Original language | English |
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Pages (from-to) | 124-137 |
Number of pages | 14 |
Journal | Engineering with Computers |
Volume | 18 |
Issue number | 2 |
DOIs | |
State | Published - Aug 2002 |
Keywords
- DTMOS
- Dynamic domain decomposition
- Linux cluster
- Load balancing
- MOSFET
- Parallel I-V points calculation
- VLSI device simulation