A platform with exquisite film profile engineering in oxide-based thin-film transistors for more-than-moore applications

Horng Chih Lin, Yu An Huang

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Recently we proposed and developed a unique film profile engineering (FPE) scheme for the fabrication of high-performance sub-micron oxide-semiconductor TFTs. In this scheme, profiles of the three pivotal thin films contained in a device, including gate oxide, oxide-semiconductor channel, and source/drain metal films, can be effectively tailored by selecting proper deposition tools with tunable process conditions. The fabricated IGZO, ZnO, and ZnON devices show decent performance in terms of high on/off current ratio (> 108) and steep subthreshold swing (<100 mV/dec). Since the low-temperature and the mature processes involved are highly compatible to the modern IC manufacturing, the fabricated devices can be readily integrated into the back-end-of-line (BEOL) of an advanced chip, making the FPE scheme useful and potential for a number of emerging applications in the more-than-Moore era.

Original languageEnglish
Title of host publicationProceedings - 2019 IEEE 13th International Conference on ASIC, ASICON 2019
EditorsFan Ye, Ting-Ao Tang
PublisherIEEE Computer Society
ISBN (Electronic)9781728107356
DOIs
StatePublished - Oct 2019
Event13th IEEE International Conference on ASIC, ASICON 2019 - Chongqing, China
Duration: 29 Oct 20191 Nov 2019

Publication series

NameProceedings of International Conference on ASIC
ISSN (Print)2162-7541
ISSN (Electronic)2162-755X

Conference

Conference13th IEEE International Conference on ASIC, ASICON 2019
Country/TerritoryChina
CityChongqing
Period29/10/191/11/19

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