A One-Step Single-Cleaning Solution for CMOS Processes

Tien-Sheng Chao*, C. H. Yeh, T. M. Pan, T. F. Lei, Y. H. Li

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1 Scopus citations


In this paper, we demonstrate a one-step single-cleaning solution to replace the conventional RCA two-step cleaning method for complementary metal oxide semiconductor (CMOS) processes. We found the performance of devices fabricated using this new recipe is comparable or even better than that of devices fabricated using the conventional RCA method. The benefits of this method are more efficient removal of contaminants, improved driving current of devices, simpler processing, fewer steps in cleaning, time savings, reduction of cost and of chemical waste, and reduced impact on the environment.

Original languageEnglish
JournalJournal of the Electrochemical Society
Issue number9
StatePublished - 1 Sep 2003


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