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A novel way of LTPS model extraction with hysteresis and transient current analysis

  • Chen Hao Kuo
  • , Yung Sheng Tsai
  • , Ching Chieh Tseng
  • , Chee Wai Lau
  • , Chun Yen Liu
  • , Hannibal Wang
  • , Leon Huang
  • , Scott Lin
  • , You Pang Wei
  • , Po-Tsun Liu

Research output: Contribution to journalConference articlepeer-review

10 Scopus citations

Abstract

Time-sampling measurements are used in this paper to build time dependent L TPS TFT current model The device model that considers bias and time dependent threshold voltage (Vth) shift and mobility degradation is implemented in Eldo through GUDM for simulating a pixel circuit as an indicator of panel performance.

Original languageEnglish
Pages (from-to)1123-1126
Number of pages4
JournalDigest of Technical Papers - SID International Symposium
Volume46
Issue numberBook 3
DOIs
StatePublished - 1 Jun 2015
Event2015 SID International Symposium - San Jose, United States
Duration: 2 Jun 20153 Jun 2015

Keywords

  • Eldo
  • GUDM
  • LTPS
  • Time-sampling measurement
  • Transient current
  • V degradation

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