Abstract
Time-sampling measurements are used in this paper to build time dependent L TPS TFT current model The device model that considers bias and time dependent threshold voltage (Vth) shift and mobility degradation is implemented in Eldo through GUDM for simulating a pixel circuit as an indicator of panel performance.
| Original language | English |
|---|---|
| Pages (from-to) | 1123-1126 |
| Number of pages | 4 |
| Journal | Digest of Technical Papers - SID International Symposium |
| Volume | 46 |
| Issue number | Book 3 |
| DOIs | |
| State | Published - 1 Jun 2015 |
| Event | 2015 SID International Symposium - San Jose, United States Duration: 2 Jun 2015 → 3 Jun 2015 |
Keywords
- Eldo
- GUDM
- LTPS
- Time-sampling measurement
- Transient current
- V degradation
Fingerprint
Dive into the research topics of 'A novel way of LTPS model extraction with hysteresis and transient current analysis'. Together they form a unique fingerprint.Cite this
- APA
- Author
- BIBTEX
- Harvard
- Standard
- RIS
- Vancouver