A novel way of LTPS model extraction with hysteresis and transient current analysis

Chen Hao Kuo, Yung Sheng Tsai, Ching Chieh Tseng, Chee Wai Lau, Chun Yen Liu, Hannibal Wang, Leon Huang, Scott Lin, You Pang Wei, Po-Tsun Liu

Research output: Contribution to journalConference articlepeer-review

7 Scopus citations

Abstract

Time-sampling measurements are used in this paper to build time dependent L TPS TFT current model The device model that considers bias and time dependent threshold voltage (Vth) shift and mobility degradation is implemented in Eldo through GUDM for simulating a pixel circuit as an indicator of panel performance.

Original languageEnglish
Pages (from-to)1123-1126
Number of pages4
JournalDigest of Technical Papers - SID International Symposium
Volume46
Issue numberBook 3
DOIs
StatePublished - 1 Jun 2015
Event2015 SID International Symposium - San Jose, United States
Duration: 2 Jun 20153 Jun 2015

Keywords

  • Eldo
  • GUDM
  • LTPS
  • Time-sampling measurement
  • Transient current
  • V degradation

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