Abstract
Time-sampling measurements are used in this paper to build time dependent L TPS TFT current model The device model that considers bias and time dependent threshold voltage (Vth) shift and mobility degradation is implemented in Eldo through GUDM for simulating a pixel circuit as an indicator of panel performance.
Original language | English |
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Pages (from-to) | 1123-1126 |
Number of pages | 4 |
Journal | Digest of Technical Papers - SID International Symposium |
Volume | 46 |
Issue number | Book 3 |
DOIs | |
State | Published - 1 Jun 2015 |
Event | 2015 SID International Symposium - San Jose, United States Duration: 2 Jun 2015 → 3 Jun 2015 |
Keywords
- Eldo
- GUDM
- LTPS
- Time-sampling measurement
- Transient current
- V degradation