A novel Si-B diffusion source for p+-poly-Si gate

Tien-Sheng Chao; Chung Ping Kuo; T. P. Chen; Tan Fu Lei

doi:10.1149/1.1392563

A novel Si-B diffusion source for p⁺-poly-Si gate

Tien-Sheng Chao^*, Chung Ping Kuo, T. P. Chen, Tan Fu Lei

^*Corresponding author for this work

Department of Electrophysics

Research output: Contribution to journal › Article › peer-review

Abstract

In this paper, we report a novel Si-B diffusion source for p⁺-poly-Si gate p-metal oxide-semiconductor field effect transistors (pMOSFETs). It is found that boron penetration can be effectively suppressed using this process. AH the electrical properties of the 'MOS capacitors are significantly improved over the conventional BF or B+-implanted samples. This process is very promising for fabrication of future surface-channel p-MOSFETs.

Original language	English
Pages (from-to)	3852-3855
Number of pages	4
Journal	Journal of the Electrochemical Society
Volume	146
Issue number	10
DOIs	https://doi.org/10.1149/1.1392563
State	Published - 1 Jan 1999

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10.1149/1.1392563

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@article{d183e21b35704eaba73f738630d0e9e3,

title = "A novel Si-B diffusion source for p+-poly-Si gate",

abstract = "In this paper, we report a novel Si-B diffusion source for p+-poly-Si gate p-metal oxide-semiconductor field effect transistors (pMOSFETs). It is found that boron penetration can be effectively suppressed using this process. AH the electrical properties of the 'MOS capacitors are significantly improved over the conventional BF or B+-implanted samples. This process is very promising for fabrication of future surface-channel p-MOSFETs.",

author = "Tien-Sheng Chao and Kuo, {Chung Ping} and Chen, {T. P.} and Lei, {Tan Fu}",

year = "1999",

month = jan,

day = "1",

doi = "10.1149/1.1392563",

language = "English",

volume = "146",

pages = "3852--3855",

journal = "Journal of the Electrochemical Society",

issn = "0013-4651",

publisher = "Institute of Physics",

number = "10",

}

TY - JOUR

T1 - A novel Si-B diffusion source for p+-poly-Si gate

AU - Chao, Tien-Sheng

AU - Kuo, Chung Ping

AU - Chen, T. P.

AU - Lei, Tan Fu

PY - 1999/1/1

Y1 - 1999/1/1

N2 - In this paper, we report a novel Si-B diffusion source for p+-poly-Si gate p-metal oxide-semiconductor field effect transistors (pMOSFETs). It is found that boron penetration can be effectively suppressed using this process. AH the electrical properties of the 'MOS capacitors are significantly improved over the conventional BF or B+-implanted samples. This process is very promising for fabrication of future surface-channel p-MOSFETs.

AB - In this paper, we report a novel Si-B diffusion source for p+-poly-Si gate p-metal oxide-semiconductor field effect transistors (pMOSFETs). It is found that boron penetration can be effectively suppressed using this process. AH the electrical properties of the 'MOS capacitors are significantly improved over the conventional BF or B+-implanted samples. This process is very promising for fabrication of future surface-channel p-MOSFETs.

UR - http://www.scopus.com/inward/record.url?scp=0033321495&partnerID=8YFLogxK

U2 - 10.1149/1.1392563

DO - 10.1149/1.1392563

M3 - Article

AN - SCOPUS:0033321495

SN - 0013-4651

VL - 146

SP - 3852

EP - 3855

JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

IS - 10

ER -

A novel Si-B diffusion source for p⁺-poly-Si gate

Abstract

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