A novel self-aligned T-shaped gate process for deep submicron Si MOSFET's fabrication

Keyphrases

• Self-aligned 100%
• Deep Submicron 100%
• Si MOSFET 100%
• T-shaped Gate 100%
• MOSFET Fabrication 100%
• Poly-Si 66%
• Gate Structure 66%
• Gate Resistance 66%
• Thermal Stability 33%
• Silicidation 33%
• Gate Electrode 33%
• Sidewall Spacer 33%
• T-shaped 33%
• Planarization 33%
• Selective Etching 33%
• Spacer Technique 33%

Engineering

• Metal-Oxide-Semiconductor Field-Effect Transistor 100%
• Polysilicon 100%
• Experimental Result 50%
• Field Effect Transistor 50%
• Side Wall 50%
• Gate Electrode 50%
• Selective Etching 50%
• Planarization 50%

Material Science

• Metal-Oxide-Semiconductor Field-Effect Transistor 100%
• Thermal Stability 50%
• Field Effect Transistor 50%