A novel self-aligned etch stopper structure with lower photo leakage for AMLCD applications

Chung Yu Liang*, Feng Yuan Gan, Po-Tsun Liu, T. C. Chang, F. S. Yeh, Stephen Hsin Li Chen

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

Abstract

We introduce a novel self-aligned etch stopper, sidewall-contact a-Si:H TFT (ESSC-TFT) which allow us to reduce the photo leakage current by the island-in structure. This ESSC-TFT design reduces the volume of a-Si film, the active region can totally be shielded by the gate metal resulting in the prevention from direct back light illumination. With the sidewall-contact, the hole current is reduced due to the smaller contact area, and we expect the source, drain parasitic intrinsic resistance of a-Si can be also lessened by the ESSC-TFT structure. Although the defects between etched a-Si and n+ a-Si film may degrade the on current, the ESSC-TFT still exhibits higher on-off ratio than the one in traditional ES-TFT structure.

Original languageEnglish
Pages (from-to)193-196
Number of pages4
JournalDigest of Technical Papers - SID International Symposium
Volume37
Issue number1
DOIs
StatePublished - 1 Jan 2006
Event44th International Symposium, Seminar, and Exhibition, SID 2006 - San Francisco, CA, United States
Duration: 4 Jun 20069 Jun 2006

Keywords

  • a-Si
  • Etch stopper
  • Self-aligned
  • TFT

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