A Novel Read Scheme for Large Size One-Resistor Resistive Random Access Memory Array

Mohammed Zackriya; Harish M. Kittur; Albert Chin

doi:10.1038/srep42375

A Novel Read Scheme for Large Size One-Resistor Resistive Random Access Memory Array

Mohammed Zackriya, Harish M. Kittur, Albert Chin^*

^*Corresponding author for this work

Institute of Electronics

Research output: Contribution to journal › Article › peer-review

48 Scopus citations

Abstract

The major issue of RRAM is the uneven sneak path that limits the array size. For the first time record large One-Resistor (1R) RRAM array of 128x128 is realized, and the array cells at the worst case still have good Low-/High-Resistive State (LRS/HRS) current difference of 378 nA/16 nA, even without using the selector device. This array has extremely low read current of 9.7 μA due to both low-current RRAM device and circuit interaction, where a novel and simple scheme of a reference point by half selected cell and a differential amplifier (DA) were implemented in the circuit design.

Original language	English
Article number	42375
Journal	Scientific reports
Volume	7
DOIs	https://doi.org/10.1038/srep42375
State	Published - 10 Feb 2017

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abstract = "The major issue of RRAM is the uneven sneak path that limits the array size. For the first time record large One-Resistor (1R) RRAM array of 128x128 is realized, and the array cells at the worst case still have good Low-/High-Resistive State (LRS/HRS) current difference of 378 nA/16 nA, even without using the selector device. This array has extremely low read current of 9.7 μA due to both low-current RRAM device and circuit interaction, where a novel and simple scheme of a reference point by half selected cell and a differential amplifier (DA) were implemented in the circuit design.",

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A Novel Read Scheme for Large Size One-Resistor Resistive Random Access Memory Array

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