A novel planarization of oxide-filled shallow-trench isolation

Keyphrases

• Oxides 100%
• Shallow Trench Isolation 100%
• Planarization 100%
• Polishing Process 60%
• Chemical Mechanical Polishing 60%
• Polysilicon 20%
• Reactive Ion Etching 20%
• P-n Junction 20%
• Gate Oxide 20%
• Low Leakage Current 20%
• Low Defect Density 20%
• Wide-field 20%
• Active Regions 20%
• Layered Structure 20%
• Technology-based 20%
• Selective Wet Etching 20%
• Field Regions 20%
• Planar Surfaces 20%
• Isolation Technology 20%
• Etch Back 20%
• Junction Diodes 20%
• Trench Isolation 20%
• High Breakdown 20%

Engineering

• Shallow Trench Isolation 100%
• Planarization 100%
• Polishing Process 75%
• Chemical Mechanical Polishing 75%
• Gate Oxide 25%
• Defect Density 25%
• Active Region 25%
• Promising Candidate 25%
• Field Region 25%
• Planar Surface 25%
• Polysilicon 25%